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Multiple upsets tolerance in SRAM memory
, Article 2007 IEEE International Symposium on Circuits and Systems, ISCAS 2007, New Orleans, LA, 27 May 2007 through 30 May 2007 ; 2007 , Pages 365-368 ; 02714310 (ISSN) ; Zarandi, H. R ; Pradhan, D. K ; Sharif University of Technology
Institute of Electrical and Electronics Engineers Inc
2007
Abstract
This paper presents a high level method called Matrix code to protect SRAM-based memories against multiple bit upsets. The proposed method combines hamming code and parity code to assure the reliability of memory in presence of multiple bit-upsets with low area and performance overhead. The method is evaluated using one million multiple-fault injection experiments; next reliability and MTTF of the protected memories are estimated based on fault injection experiments and several equations. The fault detection/correction coverage are also calculated and compared with previous methods i.e., Reed-Muller and hamming code. The results reveal that the proposed method behaves better than these...