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The noise equivalent circuit model of quantum-dot lasers
, Article Journal of Russian Laser Research ; Volume 33, Issue 3 , May , 2012 , Pages 217-226 ; 10712836 (ISSN) ; Mirmoeini, S. Z ; Faez, R ; Sharif University of Technology
2012
Abstract
We derive the noise equivalent circuit model of semiconductor self-assembled quantum-dot (QD) lasers (SAQDL) from the rate equations including Langevin noise sources. This equivalent circuit allows a straightforward calculation of the noise of an SAQDL combined with electronic components. Using the presented model, we study how the carrier dynamics influences relative intensity noise (RIN) of QD lasers. We demonstrate that RIN is degraded with larger inhomogeneous broadening. Furthermore, we show that RIN is enhanced for lower quantum-dot coverage level
Relative intensity noise study in two mode quantum dot laser
, Article Optica Applicata ; Volume 41, Issue 4 , 2011 , Pages 961-970 ; 00785466 (ISSN) ; Mirmoeini, S. Z ; Faez, R ; Sharif University of Technology
2011
Abstract
In this paper, for the first time, we present a semiclassical noise model for InAs/GaAs quantum dot (QD) laser considering two photon modes, i.e., ground and first excited states lasing. This model is based on the five level rate equations. By using this model, the effect of temperature variations on relative intensity noise (RIN) of QD laser is investigated. We find that the RIN significantly degrades when excited state (ES) lasing emerges at high temperature. Furthermore, we investigate the influence of the quantum dot numbers on the RIN properties