Sharif Digital Repository

In this paper we present an analytical model to analyze the influence of deep level traps on the static and dynamic responses of transistor laser (TL). Our analysis is based on analytically solving the continuity equation and rate equations including the effect of the deep level trap (DLT), which incorporates the virtual states as a conversion mechanism. The results of simulation show that the main characteristics of laser such as threshold current, quantum efficiency, output power, and modulation bandwidth are affected by total density of traps in the active region  

In this paper the gain dynamics of an all-optical gain-clamped multichannel erbium-doped fiber amplifier (EDFA) with an inhomogeneous active medium in the presence of ion pairs is modeled. A two-level model for single ions and a three-level model for ion pairs are used to drive the propagation and rate equations of inhomogeneous laser medium. The governing equations are an uncountable system of partial differential equations (PDEs). Using the moment method, the system of PDEs is converted to a finite system of ordinary differential equations (ODEs). The solution of the system of ODEs is used to analyze the gain dynamics of all-optical gain-stabilized multi-wavelength heavy doped EDFA.... 

In this paper, we present an analytical model to analyze the influence of deep level traps on the static and dynamic responses of transistor laser (TL). Our analyze is based on analytically solving the continuity equation and rate equations including the effect of the deep level trap (DLT), which incorporate the virtual states as a conversion mechanism. The results of simulation show that the main characteristics of laser such as threshold current, quantum efficiency, output power, and modulation bandwidth are affected by total density of traps in the active region