Sharif Digital Repository

In this paper, the effect of radial structure on the performance of a linear-lateral GaAs high power photoconductive semiconductor switch (PCSS) is investigated. For this purpose a three-dimensional device modeling is used to model the optically initiated GaAs switch. In this simulation a p-type device with carbon as shallow acceptor is compensated by deep donor EL2 level as a trap level. The PCSS device is designed in a back-triggered, radially symmetric switch structure which extends the blocking voltage by reducing the peak electric field near the electrodes. Device modeling was performed and the effect of different trap concentrations on dark I-V characteristics has been investigated. In... 

This paper presents a bandwidth enhancement technique for broadband Darlington amplifiers. A detailed analysis of the high-frequency performance of the Darlington amplifier and the effect of bandwidth enhancement is provided. A design procedure is also given for broadband feedback Darlington amplifiers with bandwidth enhancement and gain flattening. A single- and a three-stage feedback amplifier with the proposed improvements are designed and implemented in a 0.25-μm Al-GaAs-InGaAs pHEMT technology. The single-stage amplifier provides 6 ± 0.4 dB of small-signal gain in the frequency band of 1-30 GHz. The three-stage amplifier features 17.8 ± 0.8 dB of small-signal gain in the frequency band... 

In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at {2}f {0} and {3}f {0} frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25- μ ext{m} GaAs pHEMT technology with V {DD} of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16... 

In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at {2}f {0} and {3}f {0} frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25- μ ext{m} GaAs pHEMT technology with V {DD} of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16... 

Growth of thin layers of compound semiconductors such as GaAs and Al x Ga1-x As was obtained by Liquid Phase Epitaxy (LPE) at 838-828 ° C in thickness range of 0.1-4.3 μm which was estimated by Scanning Electron Microscopy (SEM). By Secondary Ion Mass Spectroscopy (SIMS) measurements, type of impurity atoms and their density and uniformity with respect to thickness were measured. In this way we are sure that variation of impurity atoms such as Si, Te, Sn and Ge indicates that epilayers were formed uniformly and it demonstrated that the LPE growth was a suitable way to obtain a good quality of epitaxy layers. Amount of composition parameter x in the compound semiconductor AlxGa1-xAs was... 

This letter presents a Ka-Band 0.1-μm GaAs pHEMT Power Amplifier with broad bandwidth. The isolating backvia wall (IBVW) has been proposed to improve the stability and performance. Over the frequency band of 31-40 GHz, implemented PA delivers 5 W saturated output power, 28% maximum power added efficiency (PAE) and 20 dB maximum small-signal gain. The chip size of the PA is 11.9 mm2. To the best of authors knowledge, the presented PA demonstrates widest bandwidth in Ka-band GaAs PAs while maintaining compact size  

This paper presents two wideband GaAs MMIC driver power amplifiers (PAs) suitable for X and Ku bands. The required number of stages and number of branches in each stage for an M-stage driver PA architecture is analyzed. Design of wideband matching networks for monolithic microwave integrated circuit (MMIC) driver PAs is explained and design parameters of a cascaded K-section T matching network (MN) are derived. Finally, measurement results of 8-13 GHz and 13-19 GHz driver PAs, both implemented on 0.25 μm pseudomorphic high electron mobility transistor (pHEMT) technology, are demonstrated. Each driver PA delivers 31 dBm output power with 30 % nominal PAE over the operating frequency. © 2017... 

This paper presents two integrated concurrent dual-band class-J power amplifiers (PAs) in AlGaAs-InGaAs pHEMT technology. Design flexibility of class-J space is employed to explore the availability of a dual-band PA where the center frequency of the second band is twice the center frequency of the first band (f2=2f1). The theoretical formulations are developed for f2=2f1 case, for which it is not feasible to obtain high efficiencies using class-F-1, class-F, and other high-efficiency modes. A proof of concept 5/10-GHz class-J PA is manufactured in a 0.1- μm GaAs pHEMT technology. The proposed PA delivers 26.9- and 26-dBm output power with peak power added efficiencies (PAEs) of 49% and 46%... 

This paper presents a design procedure for a wideband 6-18-GHz monolithic microwave integrated circuit highpower amplifier (HPA) in 0.25-μm AlGaAs-InGaAs pHEMT technology. The design is mainly focused on the realization of the passive circuits to provide the required low-loss and wideband impedance transformation networks. The two-stage GaAs HPA achieves an average output power of 39.6 dBm and a peak output power of 40.5 dBm at 11 GHz, in pulsed mode operation, with a small-signal gain of S21 > 10 dB over the entire bandwidth. The average power added efficiency (PAE) is 22%, with a peak PAE of 29% at 11 GHz. The HPA chip occupies an area of 5×3.6 mm2. The achieved output power and the... 

In this work, a GaN-based quantum well LED is theoretically analyzed in a multi-layer structure composed of a quantum well embedded in a waveguide core surrounded by photonic crystal slab and a sapphire substrate. The electromagnetic eigenmodes are obtained throughout above structure via revised plane wave-scattering matrix method. The omnidirectional transmission and reflection are investigated for both TE and TM polarizations from diffraction channels in Ewald construction. Then, we introduced angular power density and calculated radiative modes extraction efficiency. All structural parameters, such as lattice geometry, lattice constant, photonic crystal thickness and filling factor, are... 

In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at 2f_0 and 3f_0 frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25-μm GaAs pHEMT technology with VDD of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16 transistors in parallel to... 

Low-noise amplifiers (LNAs) with low-noise performance are critical components in communication systems. However, reaching a high level of performance is difficult. This study introduces a LNA for radio frequency front-end receivers with a frequency range of 6–12 GHz. The planned LNA contains a two-stage high-electron-mobility transistor cascade amplifier with a minimum measured noise figure of 0.8 dB and a peak gain of 25 dB at room temperature. The proposed LNA is based on a gallium arsenide field-effect transistor transistor (CE3512K2) because of its good low-noise performance at microwave frequency bands. The measured results demonstrate that the proposed LNA is perfectly matched over... 

The performance analysis of junctionless (JL) gate-all-around (GAA) metal oxide semiconductor field effect transistors (MOSFETs) is investigated using the Non-Equilibrium Green's Function (NEGF) formalism. The main problem of JL transistors is found to be the OFF-state current. In the present work, the OFF-state current of such devices is decreased by choosing channel materials with a large band gap and heavy effective mass. Our simulation results show that the OFF-state current of JL transistors with p-type GaAs is less than that of n-type GaAs. Plus, the heterostructure (HES) channel is proposed in this study for improving the device characteristics of JL-FETs as compared to homostructure...