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The laser-assisted field effect transistor gas sensor based on morphological zinc-excited tin-doped in2o3 nanowires
, Article Surface Review and Letters ; Volume 24, Issue 8 , 2017 ; 0218625X (ISSN) ; Khosravinejad, F ; Sharif University of Technology
Abstract
The gas nanosensor of indium oxide nanowires in laser assisted approach, doped with tin and zinc for gas sensing and 1D growth purposes respectively, was reported. The nanowires were very sensitive to H2S gas in low concentration of 20 ppb gas at room temperature. The fast dynamic intensive and sensitive response to gas was in a few seconds with an on/off sensitivity ratio of around 10. The square cross-section indium oxide nanowires were fabricated through physical vapor deposition (PVD) mechanism and annealing approach. The field emission scanning electron microscopy (FESEM) observations indicated that the annealing temperature was vital in nanostructures' morphology. The fabricated...