Sharif Digital Repository

Semiconductor gas sensors have been developed so far on empirical bases, but now recent innovative materials for advancing gas sensor technology have been made available for further developments. Two-dimensional (2D) materials have gained immense attention since the advent of graphene. This attention inspired researchers to explore a new family of potential 2D materials. The superior structural, mechanical, optical and electrical properties of 2D materials made them attractive for next-generation smart device applications. There are considerable improvements and research studies on graphene, molybdenum disulfide (MoS2), tungsten disulfide (WS2), tin sulfide (SnS2), black phosphorus and other... 

SnS2-SnO2 nano-heterostructures are synthesized with two different precursors of thioacetamide (TAA) and thiourea (TU) at various solvent ratios (SR) of ethanol and water by using a facile, economical, scalable, and cost-effective solvothermal method. The obtained products have been characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDX), and Brunauer–Emmet–Teller (BET) techniques. It is found that different precursors and various SR values have an influence on the composition and morphologies of the prepared nanostructures, leading to variation in capacitive behavior of the fabricated electrodes.... 

Two-dimensional semiconductor materials can be combined with conventional silicon-based technology and sort out part of the future challenges in semiconductor technologies due to their novel electrical and optical properties. Here, we exploit the optoelectronics property of the silicon/SnS2 heterojunction and present a new class of backward diodes using a straightforward fabrication method. The results indicate an efficient device with fast photoresponse time (5-10 μs), high photoresponsivity (3740 AW-1), and high quantum efficiency (490%). We discuss device behavior by considering the band-to-band tunneling model and band bending characteristics of the heterostructure. This device structure... 

This work focused on the spray pyrolysis deposition of Cu2SnS3 (CTS) thin films using a stable basic solution. The effect of the most important parameters including the substrate temperature and copper concentration on the structural, optical and electrical properties of as-deposited thin films was investigated. Qualified thin films with suitable microstructure and composition could be deposited at 370℃. XRD and Raman analysis while confirming the pure CTS film formation, show that as the Cu/Sn decreases, the crystal structure layers are changed from the tetragonal phase to the cubic phase mixed with Sn-rich phases. The optical study shows its band gap between 1.08 and 1.2 eV for different... 

Due to the favorable properties of two-dimensional materials such as SnS2, with an energy gap in the visible light spectrum, and InSe, with high electron mobility, the combination of them can create a novel platform for electronic and optical devices. Herein, we study a tunable gain SnS2/InSe Van der Waals heterostructure photodetector. SnS2 crystals were synthesized by chemical vapor transport method and characterized using X-ray diffraction and Raman spectroscopy. The exfoliated SnS2 and InSe layers were transferred on the substrate. This photodetector presents photoresponsivity from 14 mA/W up to 740 mA/W and detectivity from 2.2 × 108 Jones up to 3.35 × 109 Jones by gate modulation from... 

CdS is conventionally used as the n-type buffer layer in chalcopyrite (CIG(S, Se)) and Kesterite (CZT(S, Se)) solar cells. CdS is toxic and there are wide attempts to find substitutes for it. Here, we suggest SnS2 as a possible alternative. SnS2 films were deposited by pulsed laser deposition (PLD), characterized to estimate carrier concentration and electron affinity values, and the obtained values were used to model a CZT(S, Se) solar cell. The experimental values of a benchmark CZT(S, Se) cell with efficiency of 12.3% were employed to obtain the density and energy position of defects in CZT(S, Se) and validating the model. We observed that SnS2 results in almost identical performance as... 

Tin sulfide (SnS2) has recently attracted considerable attention due to its layered structure that may form two dimensional morphologies. It is an n-type semiconductor with band gap and electron affinity similar to CdS and In2S3; therefore can be regarded as an alternative for these materials in thin film solar cells. Here, we synthesis of SnS2 nanoparticles with different morphology in different ratio of water-ethanol mixed solution by solvothermal method, and observe that more ethanol leads to large sheet like morphologies, while water based synthesis results in very small nanosheets. A challenge in wet deposition of device-quality thin films of SnS2 is the requirement for highly dispersed...