Sharif Digital Repository

Unidirectional current flow is at the heart of modern electronics, which has been conceived by making p–n junctions or Schottky barriers between different kinds of materials. Within such elements, however, synthesis of thin film lateral heterostructures has so far remained challenging. Here, a one-step simple synthesis of p-type, n-type, and metallic lateral heterostructures using bipolar electrodeposition (BPE) technique is reported. Molybdenum oxides and sulfides with gradient of oxygen and sulfur are deposited at a metallic substrate. A lateral heterostructure is achieved with electrical properties that change from p- to n-type semiconductor and then to metal by moving in the plane of the...