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A high-voltage series-stacked IGBT switch with active energy recovery feature for pulsed power applications
, Article IEEE Transactions on Industrial Electronics ; Volume 67, Issue 5 , 2020 , Pages 3650-3661 ; Zarghani, M ; Kaboli, S ; Sharif University of Technology
Institute of Electrical and Electronics Engineers Inc
2020
Abstract
Applying series configuration of the insulated gate bipolar transistors (IGBTs) to the pulsed power supplies offers unique features such as compactness and long life time. In the high-voltage pulsed power supplies, a large number of the IGBTs are required to be serially connected. Hence, the safe operating condition provision for the series IGBTs is an important and crucial issue. The effect of the voltage unbalancing factors becomes remarkable when the number of switches in the series structure increases. There are passive and active methods to balance the voltage of the series IGBTs. In both of these methods, an amount of power must be dissipated to remove the effect of the voltage...
Charge controlling in nanoscale shielded channel DG-MOSFET: A quantum simulation
, Article 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, 16 December 2007 through 20 December 2007 ; 2007 , Pages 127-129 ; 9781424417285 (ISBN) ; Orouji, A. A ; Faez, R ; Sharif University of Technology
2007
Abstract
Nanoscale Shielded channel transistors are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations for first time. We present self-consistent solutions of ultrathin body device structures to investigate the effect of electrically shielded channel region which impose charge controlling in the channel region on the characteristics of nanoscale DG-MOSFET. The simulation method is based on Nonequlibrium Green's Function (NEGF). Starting from a basic structure with a gate length of 10 nm, the effect of gate length variation on the performance of the device has been investigated. © 2007 IEEE
Two-dimensional quantum simulation of scaling effects in ultrathin body MOSFET structure: NEGF approach
, Article 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, 16 December 2007 through 20 December 2007 ; 2007 , Pages 240-242 ; 9781424417285 (ISBN) ; Dehdashti, N ; Faez, R ; Sharif University of Technology
2007
Abstract
For the first time, we present self-consistent solution of ultrathin body device structures to investigate the device parameters variation on the characteristics of nanoscale MOSFET. Our two dimensional (2-D) device simulator Is based on Nonequlibrium Green's Function (NEGF) forma lism. Starting from a basic structure (DG-MOSFET) with a gate length of 10 nm, variation of gate length, channel thickness, gate oxide parameters was carried out in connection with the numerical calculation of device characteristics. In this work Quantum transport equations are solved in 2-D by NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of...