Sharif Digital Repository

We present an explicit solution of carrier and field distributions in abrupt PN junctions under equilibrium. An accurate logarithmic numerical method is implemented and results are compared to the analytical solutions. Analysis of results shows reasonable agreement with numerical solution as well as the depletion layer approximation. We discuss extensions to the asymmetric junctions. Approximate relations for differential capacitance C-V and current-voltage I-V characteristics are also found under non-zero external bias  

Nanoscale Shielded channel transistors are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations for first time. We present self-consistent solutions of ultrathin body device structures to investigate the effect of electrically shielded channel region which impose charge controlling in the channel region on the characteristics of nanoscale DG-MOSFET. The simulation method is based on Nonequlibrium Green's Function (NEGF). Starting from a basic structure with a gate length of 10 nm, the effect of gate length variation on the performance of the device has been investigated. © 2007 IEEE  

For the first time, we present self-consistent solution of ultrathin body device structures to investigate the device parameters variation on the characteristics of nanoscale MOSFET. Our two dimensional (2-D) device simulator Is based on Nonequlibrium Green's Function (NEGF) forma lism. Starting from a basic structure (DG-MOSFET) with a gate length of 10 nm, variation of gate length, channel thickness, gate oxide parameters was carried out in connection with the numerical calculation of device characteristics. In this work Quantum transport equations are solved in 2-D by NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of... 

We proposed a modeling procedure to calculate the impact of temperature on the detection efficiency in photodetectors based on CdTe materials. Temperature increase impacts on the electrical properties of the materials such as carrier mobility and carrier recombination lifetime. This impact which can be effective in some cases has been normally ignored in the modeling approaches presented in the literature. Here we show that increasing the temperature from 190 K to 300 K not reduces the mobility of both electrons and holes but also significantly reduces the carrier lifetime. The result will impact on electric-field within the depletion width of the device, drift and diffusion lengths which... 

Internet-of-Things (IoT) devices have a strict necessity for power consumption to achieve the expected battery life. Therefore, measuring and optimizing the energy consumption of IoT nodes are essential. IoT nodes feature extreme current consumption range over 100 dB between their operating modes. The main focus of this article is to design and implement a low-power and low-cost current measurement circuit, which can be integrated into IoT nodes. A new pass element is introduced for measuring the current consumption. This element is placed in the current path to measure current over a high dynamic range with a constant voltage drop. The introduced pass element consists of a capacitor and... 

Fault tolerant operation of single-ended non-isolated DC-DC converters used in embedded and safety critical applications is mandatory to guaranty service continuity. This paper proposes a new, fast and efficient FPGA-based open and short-circuit switch fault diagnosis asssociated to fault tolerant converter topology. The results of Hardware-In-the-Loop and experimental tests are presented and discussed  

As the semiconductor industry advances to the deep sub-micron and nano technology points, the on-chip components are more prone to the defects during manufacturing and faults during system operation. Consequently, fault tolerant techniques are essential to improve the yield of modern complex chips. We propose a fault-tolerant routing algorithm that keeps the negative effect of faulty components on the NoC power and performance as low as possible. Targeting intermittent faults, we achieve fault tolerance by employing a simple and fast mechanism composed of two processes: NoC monitoring and route adaption. Experimental results show the effectiveness of the proposed technique, in that it offers... 

The reported investigation aims at developing a compact model for circuit-aging simulation. The model considers dynamic trap-density increase during circuit operation in a consistent way. The model has been applied to an SRAM cell, where it is believed that the NBTI effect dominates. Our simulation verifies that the hot-carrier effect has a compensating influence on the NBTI aging of SRAM cells. © 2017 The Japan Society of Applied Physics  

Triboelectric nanogenerators (TENGs) can harvest mechanical energy through coupling triboelectric effect and electrostatic induction. Typically, TENGs consist of organic materials, however on account of the potentially wide range of applications of TENGs as the self-powered portable/wearable electronics, biomedical devices, and sensors; semiconductor metal oxide materials can be promising candidates to be incorporating in TENG structure. Here, flexible TENG based on self-organized TiO2 nanotube arrays (TNTAs) is fabricated via anodization method. The introduced flexible large area nanotubular electrode is employed as the moving electrode in contact with Kapton film in vertical contact... 

Applying series configuration of the insulated gate bipolar transistors (IGBTs) to the pulsed power supplies offers unique features such as compactness and long life time. In the high-voltage pulsed power supplies, a large number of the IGBTs are required to be serially connected. Hence, the safe operating condition provision for the series IGBTs is an important and crucial issue. The effect of the voltage unbalancing factors becomes remarkable when the number of switches in the series structure increases. There are passive and active methods to balance the voltage of the series IGBTs. In both of these methods, an amount of power must be dissipated to remove the effect of the voltage... 

Enhancing the photoresponse of single-layered semiconductor materials is a challenge for high-performance photodetectors due to atomically thickness and limited quantum efficiency of these devices. Band engineering in heterostructure of transition metal chalcogenides (TMDs) can sort out part of this challenge. Here, we address this issue by utilizing the plasmonics phenomenon to enrich the optoelectronics property of the WSe2/MoS2 heterojunction and further enhancement of photoresponse. The introduced approach presents a contamination-free, tunable and efficient way to improve light interactions with heterojunction devices. The results showed a 3600-fold enhancement in photoresponsivity and... 

Organic-inorganic halide perovskites (OIHPs) have emerged as a promising semiconductor for the fabrication of efficient optoelectronic devices such as photodetectors (PDs). Among all the perovskite compositions, the mixed-halide MAPb(BrxI1-x)3 formulations have gained more attention for photodetection application thanks to their tunable optoelectronic properties and great stability. However, there is still a lack of sufficient understanding of the effect of Br doping on the stability and physical properties of MAPb(BrxI1-x)3 based PDs. In this work, we prepare a series of MAPb(BrxI1-x)3 (x = 0, 0.04, 0.08, 0.12, and 0.16) single crystals (SCs) and investigate the influence of the Br content... 

In this paper, we present a study on the contribution of silicon nanocrystals to the electrical transport characteristics of large (100 µ x 100 µm) and small (100 nm x 100 nm) metaloxide- semiconductor (MOS) capacitors at room temperature. A layer of silicon nanocrystals is synthesized within the oxide of these capacitors by ultra-low energy ion implantation and annealing. Several features including negative differential resistance (NDR), sharp current peaks and random telegraph signal (RTS) are demonstrated in the current-voltage and current-time characteristics of these capacitors. These features have been associated to charge storage in silicon nanocrystals and to the resulting Coulomb... 

In this paper, a new zero-voltage-switching, high power-factor, bridgeless rectifier is introduced. In this topology, an auxiliary circuit provides soft switching for all of the power semiconductor devices. Thus the switching losses are reduced and the highest efficiency can be achieved. The proposed converter has been analyzed and a design procedure has been introduced. The control circuit for the converter has also been developed. Based on the given approach, a 250 W, 400 Vdc prototype converters has been designed at 100 kHz for universal input voltage (90-264 Vrms) applications. A maximum efficiency of 94.6% and a power factor correction over 0.99 has been achieved. The simulation and... 

The continued migration to smaller nanometer geometries brought fundamental limits to traditional on-chip hard wires performance. According to the International Technology Roadmap for Semiconductor (ITRS), feature size shrinking leads an increase in the operating frequency of RFCMOS devices. Thus, new interconnect methodologies such as radio frequency (RF) wireless can be employed on future chips projected for intra-chip wireless data communications. The size of Si integrated antenna in these frequencies will be several millimetres and the antenna length will be decrease by frequency increasing. In this paper, we have proposed an optimum radiation pattern achieved by a phased array (PA)... 

A method to simulate an open boundary problem within the finite difference time domain approach for the emission of photo-conductive antennas is presented here. For this purpose, we use convolutional perfectly matched layers (CPMLs). In these devices, the semiconductor region, where transient currents are present in simulation time, is considered to be an 'active' medium. This medium is extended virtually beyond its boundaries or the computational domain limits. We explain in this communication how to simulate the transient state of a semiconductor in a CPML region as well as the potential of the method developed to solve conventional practical applications  

The series configuration of fast semiconductor switches seems to be the key component in the high-voltage and fast rising time pulse generation. In this approach, two important issues must be considered. The first is to provide a safe operating condition for the switches in transient intervals. The second is to design a gate drive system with the capability of driving a large number of discrete devices simultaneously. The aim of this paper is to obviate these two requirements. First, different factors affecting the unbalanced voltage sharing between the series switches are discussed. In this investigation, the switch-to-ground parasitic capacitance effect has been recognized as the major... 

Carbon nanotubes (CNT) have unique electronic properties and remarkable optical properties. Despite of on layer thickness of CNTs, it has able to absorb photons from visible to far infrared and terahertz. These unique properties lets to create heterojunction devices by semiconductor/CNTs or metal/CNTs junctions e.g. photodiodes, sensor and heterojunction solar cell. The CNTs can play the role of a heterojunction component for charge separation as a high conductive network for charge transport and as a transparent electrode for light illumination and charge collection. The main objective of the present article is to establish a relation between interface recombination and the characteristics... 

Advances in semiconductor technology have made integration of multiple processing cores into one single die a promising trend towards increasing processing performance, lowering power consumption, and increasing reliability for embedded systems. Multicore processors, due to their intrinsic redundancies, are good choices for critical embedded systems for which the reliability is a crucial component. In this paper, an aging-aware adaptive fault tolerance method for DVFS-enabled multicore processors is presented. The analytical results show 3 to 6 order of magnitude increase in reliability of the system without addition of cores or redundant software. By using an aging-aware approach, the... 

Two-dimensional semiconductor materials can be combined with conventional silicon-based technology and sort out part of the future challenges in semiconductor technologies due to their novel electrical and optical properties. Here, we exploit the optoelectronics property of the silicon/SnS2 heterojunction and present a new class of backward diodes using a straightforward fabrication method. The results indicate an efficient device with fast photoresponse time (5-10 μs), high photoresponsivity (3740 AW-1), and high quantum efficiency (490%). We discuss device behavior by considering the band-to-band tunneling model and band bending characteristics of the heterostructure. This device structure...