Sharif Digital Repository

Using a model reduction method, a formula for the ideality factor of a pn junction as a function of the diffusion and generation terms of its reverse current is derived. Using this formula a method for separate computation of these two currents for a pn junction is presented. The validity of the method is investigated using computer simulations for an assumed diode with known ideality factor and total leakage current. Experimental results for two commercially available diodes validate the proposed technique  

In contrast to graphene, which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the 2-D geometry, unique transport features of graphene, and the possibility of doping graphane, p and n regions can be defined so that 2-D p-n junctions become feasible with small reverse currents. This paper introduces a basic analysis to obtain the current-voltage characteristics of such a 2-D p-n junction based on graphane. As we show, within the approximation of Shockley's law of junctions, an ideal I-V characteristic for this p-n junction is to be expected  

Graphane is a semiconductor with an energy gap, obtained from hydrogenation of the two-dimensional grapheme sheet. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of doping graphane, p and n regions can be defined so that p-n junctions become feasible with small reverse currents. Our recent analysis has shown that an ideal I-V characteristic for this type of junctions may be expected. Here, we predict the behavior of bipolar juncrion transistors based on graphane. Profiles of carriers and intrinsic parameters of the graphane transistor are calculated and discussed  

We study the effects of recombination and generation process on the operation of bipolar junction transistor based on two-dimensional materials, and in particular, graphone. Here, we use Shockley-Read-Hall model to study these process. First, we investigate the current-voltage characteristics of a graphone p-n junction considering generation and recombination process. Then, we calculate the estimated changes in current gain, cutoff frequency, and output characteristics of a graphone bipolar junction transistor designed in a recent study  

Metal-oxide gas sensors are widely used for detection of detrimental H2S gas. Among them, SnO2-CuO system has been proved to be an excellent candidate. The previous theoretical 2D thin bilayer model was able to explain some aspects of H2S sensing performance of this promising system. However, experimental researches have indicated that response values for this system are very diverse and various SnO2-CuO multicomponent heterostructures such as rods, wires and particles have much higher response than their thin bilayer counterparts. Understanding the reason behind this differences would help fabrication of optimized sensor element. However, the previous model cannot address this issue mainly... 

Resistive sensors composed of SnO2 and CuO, are known to be highly efficient in detection of detrimental H2S gas in terms of sensitivity, selectivity and speed. Recently, dependency of electrical response of the sensor toward H2S gas concentration has been related to the selective mechanism (formation of CuS) by a theoretical model. Another important factor in design of gas sensors is the working temperature which so far has not been explicitly explained for H2S sensing process of SnO2-CuO system. In present study, origin of this temperature for SnO2-CuO thin bilayer based on the selective mechanism has been theoretically interpreted. For this purpose, Poisson, Laplace and continuity... 

Abstract A visible-light-active Ag3PO4/BiPO4 nanocomposite with a p-n heterojunction structure was fabricated via a co-precipitation hydrothermal process using 2-hydroxylethylammonium formate (RTIL) as a room-temperature ionic liquid. The resulting catalysts were characterized by various techniques. The photocatalytic activity of the photocatalysts was evaluated by the photodegradation of phthalocyanine Reactive Blue 21 (RB21) under both visible and UV light irradiations. The results reveal that the heterojunction composite prepared in RTIL noticeably exhibited an improvement in both efficiency and rate of RB21 photodegradation in comparison with pure Ag3PO4 and BiPO4. The enhanced... 

Abstract We design a thermo-photovoltaic Tandem cell which produces high open circuit voltage (Voc) that causes to increase efficiency (η). The currently used materials (AlAsSb-InGaSb/InAsSb) have thermo-photovoltaic (TPV) property which can be a p-n junction of a solar cell, but they have low bandgap energy which is the reason for lower open circuit voltage. In this paper, in the bottom cell of the Tandem, there is 30 quantum wells which increase absorption coefficients and quantum efficiency (QE) that causes to increase current. By increasing the current of the bottom cell, the top cell thickness must be increased because the top cell and the bottom cell should have the same current. In... 

The conventional solar cell architectures include a p-n junction of c-Si sandwiched by rear and front contacts. The conventional approach features a complex as well as expensive procedure. Here, we propose a new architecture for p-n heterojunction solar cells prepared by a simple and cost-effective procedure. In this regard, (1) a silicon wafer underwent surface treatment through electrochemical anodization. To prepare a stick junction, (2) photoactive TiO2 nanoparticles were deposited over the porous layer by electrophoretic technique. Finally, (3) indium tin oxide (ITO) was sputtered. During the fabrication steps, we examined various anodization times ranging from 6 to 12 min to study the... 

Carbon nanotubes (CNT) have unique electronic properties and remarkable optical properties. Despite of on layer thickness of CNTs, it has able to absorb photons from visible to far infrared and terahertz. These unique properties lets to create heterojunction devices by semiconductor/CNTs or metal/CNTs junctions e.g. photodiodes, sensor and heterojunction solar cell. The CNTs can play the role of a heterojunction component for charge separation as a high conductive network for charge transport and as a transparent electrode for light illumination and charge collection. The main objective of the present article is to establish a relation between interface recombination and the characteristics... 

Phase Change Memory (PCM) is one of the most promising candidates to be used at the main memory level of the memory hierarchy due to poor scalability, considerable leakage power, and high cost/bit of DRAM. PCM is a new resistive memory that is capable of storing data based on resistance values. The wide resistance range of PCM allows for storing multiple bits per cell (MLC) rather than a single bit per cell (SLC). Unfortunately, higher density of MLC PCM comes at the expense of longer read/write latency, higher soft error rate, higher energy consumption, and earlier wearout compared to the SLC PCM. Some studies suggest removing the most error-prone level to mitigate soft error and write... 

The performance analysis of junctionless (JL) gate-all-around (GAA) metal oxide semiconductor field effect transistors (MOSFETs) is investigated using the Non-Equilibrium Green's Function (NEGF) formalism. The main problem of JL transistors is found to be the OFF-state current. In the present work, the OFF-state current of such devices is decreased by choosing channel materials with a large band gap and heavy effective mass. Our simulation results show that the OFF-state current of JL transistors with p-type GaAs is less than that of n-type GaAs. Plus, the heterostructure (HES) channel is proposed in this study for improving the device characteristics of JL-FETs as compared to homostructure...