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Full quantum mechanical simulation of a novel nanoscale DG-MOSFET: 2D NEGF approach
, Article IEEE AFRICON 2007, Windhoek, 26 September 2007 through 28 September 2007 ; December , 2007 ; 142440987X (ISBN); 9781424409877 (ISBN) ; Orouji, A. A ; Faez, R ; Sharif University of Technology
2007
Abstract
In this paper the electrical characteristics of a novel nanoscale double-gate MOSFET (DG-MOSFET) have been investigate by a full Quantum Mechanical simulation framework. This framework consists of Non-Equilibrium Green's Function (NEGF) solved self-consistently with Poisson's Equation. Quantum transport equations are solved in two-dimension (2-D) by recursive NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of simulation to get potential profile. Once self-consistently achieved all parameters of interest (e.g. potential profile, charge density, DIBL, etc) can be measured. In this novel DG-MOSFET structure, a front gate...