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High-Photoresponsive backward diode by two-dimensional SnS2/Silicon heterostructure
, Article ACS Photonics ; Volume 6, Issue 3 , 2019 , Pages 728-734 ; 23304022 (ISSN) ; Esfandiar, A ; Iraji Zad, A ; Hosseini Shokouh, S. H ; Mahdavi, S. M ; Sharif University of Technology
American Chemical Society
2019
Abstract
Two-dimensional semiconductor materials can be combined with conventional silicon-based technology and sort out part of the future challenges in semiconductor technologies due to their novel electrical and optical properties. Here, we exploit the optoelectronics property of the silicon/SnS2 heterojunction and present a new class of backward diodes using a straightforward fabrication method. The results indicate an efficient device with fast photoresponse time (5-10 μs), high photoresponsivity (3740 AW-1), and high quantum efficiency (490%). We discuss device behavior by considering the band-to-band tunneling model and band bending characteristics of the heterostructure. This device structure...