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soda-lime-glass
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Effects of substrate material and annealing temperature on morphology of zinc oxide films
, Article Materials Science and Technology ; Volume 22, Issue 3 , 2006 , Pages 308-314 ; 02670836 (ISSN) ; Sadrnezhaad, S. K ; Sharif University of Technology
2006
Abstract
A two stage chemical deposition (TSCD) technique is used to produce ZnO films on quartz glass (QG), soda lime glass (SLG) and high purity alumina (HPA) from an aqueous solution of zinc complex. The effects of the substrate material on the chemical composition and morphology of the deposited layer are investigated. The effects of different annealing temperatures (180, 300, 500 and 800°C) on the morphology and orientation of the ZnO crystallites are also determined. X-ray diffraction diffractograms show that above 300°C, the intensity of (002) peak considerably decreases with increasing temperature. Results indicate that changing the substrate from QG to SLG does not significantly influence...
Simulation of windscreen bending using viscoplastic formulation
, Article Journal of Materials Processing Technology ; Volume 170, Issue 1-2 , 2005 , Pages 298-303 ; 09240136 (ISSN) ; Rad, M ; Shahhosseini, M. R ; Shahhosseini, M. H ; Sharif University of Technology
2005
Abstract
Soda-lime glass material has been widely used for automobile windscreens. Two commercial finite element programs have been evaluated for simulation of the creep forming process using isotropic viscoplastic behavior assumption for soda-lime glass. This was done by selecting one of the programs and using it in connection with an optimization program for controlling the glass surface temperature, to examine the effect of considering thermal stresses and temperature variations along the surface of glass sheet for obtaining desired geometrical shape. The results show that the thermal stress effect must be considered for achieving more accurate simulation of glass creep forming process. Also...
Thermodynamic evaluation of adsorption of zinc complex and ZnO nano-layer prepared by tscd method based on langmuir adsorption model
, Article International Journal of Engineering, Transactions B: Applications ; Volume 22, Issue 2 , 2009 , Pages 179-184 ; 1728-144X (ISSN) ; Sadrnezhaad, S. K ; Sharif University of Technology
Materials and Energy Research Center
2009
Abstract
Zinc oxide thin films were deposited on soda-lime glass substrates from an aqueous zinc- containing complex by two-stage chemical deposition (TSCD) method. Longmuir adsorption model showed that the adsorption of atoms on the surface of the substrate was typically physical. The relation between the fractional coverage, θ, with the equilibrium constant of the adsorption reaction was nonlinear indicating that the adsorption was non-ideal. The percentage of porosity, 1-θ, of the thin layer was determined as a function of Zn 2+ concentration of the solution. By application of XRD technique, it was shown that pure crystalline ZnO of controllable thickness could be deposited by TSCD method on the...
Pure sulfide Cu2ZnSnS4 layers through a one-step low-temperature PLD technique: Insight into simulation on modified back contact to overcome the barrier of MoS2
, Article Materials Science and Engineering B: Solid-State Materials for Advanced Technology ; Volume 262 , 2020 ; Haghighi, M ; Dabbagh, M. M ; Mahdavi, S. M ; Sharif University of Technology
Elsevier Ltd
2020
Abstract
Targeting on the selenium free, pure sulfide kesterite compound (CZTS) allows retention of the higher band gap nontoxic absorber for a single-junction solar cell. In this work, CZTS thin films were deposited by the PLD method and the Structural/optical properties, as well as Mott–Schottky analysis, were studied at different substrate temperatures. Without undergoing the sulfurization process, the single-phase CZTS thin film is prepared at 300 ℃. In the second step, a numerical simulation is performed using the solar cell capacitance simulator to study the effect of the grading layer of MoS(Se)2 on the rear side of pure sulfide kesterite based solar cells. The device with a MoSe2 coated...
Two-stage chemical deposition of oxide films
, Article International Journal of Engineering, Transactions B: Applications ; Volume 21, Issue 1 , 2008 , Pages 65-70 ; 1728-144X (ISSN) ; Sadrnezhaad, S. K ; Sharif University of Technology
Materials and Energy Research Center
2008
Abstract
Two-stage chemical deposition (TSCD) technique is used to produce ZnO, Mn2O3 and NiO films on soda-lime glass (SL-G) from an aqueous solution of zinc, manganese and nickel complex, respectively. The TSCD method enables the deposition of metal oxide thin films with a thickness which can be controlled during the preparation procedure. The ZnO, Mn 2O3 and NiO thin films were polycrystalline films which were adherent well to the substrates. The SEM micrographs clearly indicate that the zinc oxide layer is composed of oval shaped crystallites preferably orientated perpendicular to the surface of the substrate. The Mn 2O3 and NiO layers were closely packed on the substrate. These particles seem to...
A Study on Optoelectronic Properties of Copper Zinc Tin Sulfur Selenide: A Promising Thin-Film Material for Next Generation Solar Technology
, Article Crystal Research and Technology ; Volume 56, Issue 7 , 2021 ; 02321300 (ISSN) ; Zubair, M ; Khesro, A ; Ahmed, R ; Uddin, S ; Shahzad, N ; Alrobei, H ; Kalam, A ; Al-Sehemi, A. G ; Ul Haq, B ; Sharif University of Technology
John Wiley and Sons Inc
2021
Abstract
Studies on copper zinc tin sulpher selenide (CZTSSe) thin-film material and its applications as a base material are intensively being researched since it is an earth-abundant, inexpensive, flexible, and interesting material for next-generation optoelectronic technologies. Apropos, this study explores and reports the synthesis of CZTSSe thin films and their key optoelectronics characteristics. The reported films are fabricated on a soda-lime glass substrate by using a physical vapor deposition technique, and then annealed from 250 to 450 °C. From the X-ray diffraction analysis, the structure of the as-deposited thin films is found to be amorphous in nature. Annealed thin films of CZTSSe...
A study on optoelectronic properties of copper zinc tin sulfur selenide: A promising thin-film material for next generation solar technology
, Article Crystal Research and Technology ; Volume 56, Issue 7 , 2021 ; 02321300 (ISSN) ; Zubair, M ; Khesro, A ; Ahmed, R ; Uddin, S ; Shahzad, N ; Alrobei, H ; Kalam, A ; Al Sehemi, A. G ; Ul Haq, B ; Sharif University of Technology
John Wiley and Sons Inc
2021
Abstract
Studies on copper zinc tin sulpher selenide (CZTSSe) thin-film material and its applications as a base material are intensively being researched since it is an earth-abundant, inexpensive, flexible, and interesting material for next-generation optoelectronic technologies. Apropos, this study explores and reports the synthesis of CZTSSe thin films and their key optoelectronics characteristics. The reported films are fabricated on a soda-lime glass substrate by using a physical vapor deposition technique, and then annealed from 250 to 450 °C. From the X-ray diffraction analysis, the structure of the as-deposited thin films is found to be amorphous in nature. Annealed thin films of CZTSSe...
Nanomechanical properties of TiO2 granular thin films
, Article ACS Applied Materials and Interfaces ; Volume 2, Issue 9 , 2010 , Pages 2629-2636 ; 19448244 (ISSN) ; Taghavinia, N ; Keshavarz Alamdari, E ; Volinsky, A.A ; Sharif University of Technology
2010
Abstract
Post-deposition annealing effects on nanomechanical properties of granular TiO2 films on soda-lime glass substrates were studied. In particular, the effects of Na diffusion on the films' mechanical properties were examined. TiO2 photocatalyst films, 330 nm thick, were prepared by dip-coating using a TiO2 sol, and were annealed between 100 °C and 500 °C. Film's morphology, physical and nanomechanical properties were characterized by atomic force microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, differential thermo-gravimetric analysis, and nanoindentation. Contrary to expectations, the maximum film hardness was achieved for 300°C annealing, with a value of 0.69 ± 0.05 GPa....