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Local impact of Stone–Wales defect on a single layer GNRFET
, Article Physics Letters, Section A: General, Atomic and Solid State Physics ; Volume 384, Issue 7 , 2020 ; Nazari, A ; Faez, R ; Shahhoseini, A ; Sharif University of Technology
Elsevier B.V
2020
Abstract
In this work, a new structure of single layer armchair graphene nanoribbon field effect transistor with the Stone–Wales (SW) defect (SWGNRFET) is studied. The simulations are solved with Poisson–Schrödinger equation self-consistently by using Non-Equilibrium Green Function (NEGF) and in the real space approach. The energy band structure is obtained by approximation tight-binding method. The results show that displacement of a defect in the width of the channel of the new structure is led to 50% increase in ION/IOFF ratio only by rotating of a C–C (Carbon–Carbon) bond with similar behavior. But, a remarkable increase of 300% in ION/IOFF ratio is obtained by a “dual center” defect. The results...