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Numerical simulation of vertical tunneling transistor with bilayer graphene as source and drain regions
, Article Physica Status Solidi (A) Applications and Materials Science ; Volume 214, Issue 10 , 2017 ; 18626300 (ISSN) ; Faez, R ; Darvish, G ; Sharif University of Technology
Abstract
In this paper, the electrical characteristics of vertical tunneling bilayer graphene field effect transistor (VTBGFET) are theoretically investigated. We evaluate the device behavior using nonequilibrium Green's function (NEGF) formalism combined with an atomistic tight binding model. By using this method, we extract the most significant figures of merit such as ON/OFF current ratio, subthreshold swing, and intrinsic gate-delay time. The results indicate that using a bilayer graphene instead of a monolayer graphene as the base material for the source and drain regions leads to a larger ON/OFF current ratio due to the presence of an energy bandgap in biased bilayer graphene. Also, the...