Sharif Digital Repository

We propose a triple-tunnel junction single electron transistor (TTJ-SET). The proposed structure consists of a metallic quantum-dot island that is capacitive coupled to a gate contact and surrounded by three tunnel junctions. To the best of our knowledge, this is the first instance of introducing this new structure that is suitable for both digital and analog applications. I-V D characteristics of the proposed TTJ-SET, simulated by a HSPICE macro model for various gate voltages, are in excellent agreement with those obtained by SIMON, which is a Monte-Carlo based simulator. We show how one can design a digital inverter by using a single TTJ-SET. We also show that, under suitable conditions,... 

The design strategy and efficiency optimization of UHF micro-power rectifiers using a novel diode connected MOS transistor is presented. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduce the threshold voltage and leakage current in compare to conventional diode connected transistors. Using the proposed diode in typical rectifiers makes a significant improvement in output voltage and current therefore the efficiency is increased comparing to the same rectifier architectures using conventional diodes. Also a design procedure for efficiency optimization is presented and a superposition method is used to optimize the performance of multiple output... 

We are proposing a next-generation graphene nanoribbon field-effect transistor (GNRFET) with superlattice source, channel, and drain (SLSCD-GNRFET), with significantly improved switching performance. The presence of superlattice in each region is for energy filtering. The simulation results indicate that the addition of an appropriate superlattice in the channel region, it reduces the subthreshold swing. Also, using proper superlattice in the drain region leads to an increase of more than a decade in the ION/IOFF ratio by intensely reducing the OFF-current. These improvements make the proposed transistor potentially suitable for the next-generation logical digital applications. Comparison of... 

The feasibility of an integrated optical memory is explored. This memory cell is based on the plasma wave modulator/switch1, which has a horizontal layered structure. A transverse voltage maintains a bias for the structure and can be used for electrical write cycle. The cell content is then read by a propagating guided optical wave across the structure. It is also possible to apply full optical read/write/clear cycles as discussed. The read cycle can be either destructive or nondestructive, depending on the wavelength. A modification of this device may be considered as an opto-transistor, in which an optical signal controls the flow of another optical beam  

Graphene, a recently discovered form of carbon, has received much attention for possible applications in nanoelectronics, due to its excellent carrier transport properties [1]. Graphene nanoribbons (GNRs) are thin strips of graphene, where the electronic properties depend on the chirality of the edge and the width of the ribbon. Zigzag GNRs (ZGNRs) show metalic behavior, whereas armchair GNRs (AGNRs) are semiconductors and their band-gap is inversely proportional to their width [2]. Therefore, narrow AGNRs have been recently suggested as a material for transistor channels. However, line edge roughness and substrate impurities can significantly degrade the ballistic transport in AGNRs,... 

In search of low cost and flexible substrates organic transistors have been suggested as an alternate to silicon transistors. Level 1 model extraction, investigating different circuit styles and proposing two new circuit styles for organic integrated circuits is done in this paper. First, level 1 model of organic transistor is found using ID-VDS characteristics of transistors reported by [9]. After that different design styles used in CMOS digital integrated circuits are reviewed and the functionality of these styles for organic integrated circuits is investigated. Two new circuit styles have been proposed in this section which have better performance for organic circuits comparing with... 

In this paper, the electrical characteristics of vertical tunneling bilayer graphene field effect transistor (VTBGFET) are theoretically investigated. We evaluate the device behavior using nonequilibrium Green's function (NEGF) formalism combined with an atomistic tight binding model. By using this method, we extract the most significant figures of merit such as ON/OFF current ratio, subthreshold swing, and intrinsic gate-delay time. The results indicate that using a bilayer graphene instead of a monolayer graphene as the base material for the source and drain regions leads to a larger ON/OFF current ratio due to the presence of an energy bandgap in biased bilayer graphene. Also, the... 

Our aim is to improve the switching performance of the graphene nanoribbon field-effect transistors (GNRFETs), exploiting the concept of energy filtering. Within the proposed scheme, a superlattice (SL) structure is used in the source of the transistor for filtering high-energy electron tail by engineering the density of states (DOS). According to simulation results, this can significantly decrease the OFF-current and the subthreshold swing (SS). A comparison of the proposed device with a conventional GNRFET and a graphene nanoribbon (GNR) tunneling field-effect transistor (GNRTFET) demonstrates a significant improvement. Therefore, a typical SL-GNRFET can reduce the average and the minimum... 

This paper investigates the effects of transistor sizing of the sleep transistor on the power consumption and speed. A method is proposed to handle the power-delay trade off and a new transistor arrangement is proposed. Simulations show how much is the appropriate size of sleep transistor respect to the gate size  

A 37 dBm power amplifier (PA) is designed on a 0.25 μm optical T-gate pseudomorphic high electron mobility transistor (pHEMT) technology. The design of this two-stage PA along with a step-by-step design procedure is presented in this paper. This methodology can be used for design of PA in different technologies and frequencies. The PA delivers 5 W output power over the frequency band of 13-19 GHz. It shows average power-added efficiency of 37% and large signal gain of 15 dB in measurements which is consistent with simulation results. The output power and efficiency of the realised amplifier reach maximums of 37.6 dBm and 45%, respectively. Considering output power, bandwidth, chip area and... 

In this paper, we present an analytical model for the large-signal analysis of the double quantum well (DQW) transistor laser. Our model is based on solving the continuity equation and the rate equations which incorporate the virtual states as a conversion mechanism. By using the presented model, effects of barrier width on DQW transistor laser static and dynamic performances are investigated. Also the static and dynamic responses of DQW transistor lasers are compared with single quantum well ones. Simulation results are in agreement with the numerical and experimental results reported by other researchers  

A new level converter for use in dual voltage SOI digital circuits is presented. This technique uses the idea of keeper transistors, and consumes less power compared to the traditional methods. The effects of load capacitance on the circuit are studied by extensive simulations. © 2006 IEEE  

Field-effect transistors have been widely used to study electronic transport and doping in colloidal quantum dot solids to great effect. However, the full power of these devices to elucidate the electronic structure of materials has yet to be harnessed. Here, we deploy nanodielectric field-effect transistors to map the energy landscape within the band gap of a colloidal quantum dot solid. We exploit the self-limiting nature of the potentiostatic anodization growth mode to produce the thinnest usable gate dielectric, subject to our voltage breakdown requirements defined by the Fermi sweep range of interest. Lead sulfide colloidal quantum dots are applied as the active region and are treated... 

A large-signal analysis of sub-harmonic parametric oscillations in Power Amplifiers (PAs) is presented in this paper. Simplified models for current-voltage and channel charge characteristics of short-channel pseudomorphic High Electron Mobility Transistors (pHEMTs) are adopted to investigate the effects of the device transconductance and gate-source capacitance nonlinearities on the amplifier stability. A 5-W Ku-band PA is designed to demonstrate the application of the presented analysis. MMIC PA is implemented in a 0.25-μm GaAs pHEMT process. According to the measurements, the PA provides 37.5 dBm (5.6 W) of output power, 36% of Power Added Efficiency (PAE), and small-signal gain of 18 dB... 

We report the results of our numerical investigation on the temperature dependence of the characteristics of the cylindrical gate-all-around Si nanowire field effect transistor (Si-NW-FET). Assuming the effect of temperature on the energy band structure of Si just like the effect of strain, we simulate the transistor characteristics at various temperatures (50 K ≤ T ≤ 300 K). In this investigation, we demonstrate the temperature dependence of the transistor sub-threshold swing and the threshold voltage are both linear functions of the temperature, represented by 61.5 × (T/300) + 63.4 (mV/decade) and 220140 × (T/300-1) (mV). By calculating the IDS - T characteristics for VDS = 0.4 V and... 

Graphene nanoribbon field effect transistors are promising devices for beyond-CMOS nanoelectronics. Graphene is a semiconductor material with zero bandgap and its bandgap must be changed. One of the opening bandgap methods is using graphene nanoribbons. By applying a defect, there is more increase on band gap of monolayer armchair graphene nanoribbon field effect transistor. So, by applying more than one defect, we can reach to much more increase in bandgap of graphene nanoribbon field effect transistors (GNRFET). In this paper, double-gated monolayer armchair graphene nanoribbon field effect transistors (GNRFET) with one single vacancy (1SV) defect (so-called 1SVGNRFET)are simulated and...