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Simulation of deep level traps effects in quantum well transistor laser
, Article Journal of Computational Electronics ; Volume 12, Issue 4 , August , 2013 , Pages 812-815 ; 15698025 (ISSN) ; Faez, R ; Sharif University of Technology
2013
Abstract
In this paper, we present an analytical model to analyze the influence of deep level traps on the static and dynamic responses of transistor laser (TL). Our analyze is based on analytically solving the continuity equation and rate equations including the effect of the deep level trap (DLT), which incorporate the virtual states as a conversion mechanism. The results of simulation show that the main characteristics of laser such as threshold current, quantum efficiency, output power, and modulation bandwidth are affected by total density of traps in the active region
Analysis of deep level trap effects in transistor lasers
, Article Lasers in Engineering ; Volume 25, Issue 5-6 , 2013 , Pages 313-322 ; 08981507 (ISSN) ; Mirmoeini, S ; Faez, R ; Sharif University of Technology
2013
Abstract
In this paper we present an analytical model to analyze the influence of deep level traps on the static and dynamic responses of transistor laser (TL). Our analysis is based on analytically solving the continuity equation and rate equations including the effect of the deep level trap (DLT), which incorporates the virtual states as a conversion mechanism. The results of simulation show that the main characteristics of laser such as threshold current, quantum efficiency, output power, and modulation bandwidth are affected by total density of traps in the active region
Large signal analysis of double quantum well transistor laser
, Article Optical and Quantum Electronics ; Volume 45, Issue 5 , 2013 , Pages 389-399 ; 03068919 (ISSN) ; Faez, R ; Sharif University of Technology
2013
Abstract
In this paper, we present an analytical model for the large-signal analysis of the double quantum well (DQW) transistor laser. Our model is based on solving the continuity equation and the rate equations which incorporate the virtual states as a conversion mechanism. By using the presented model, effects of barrier width on DQW transistor laser static and dynamic performances are investigated. Also the static and dynamic responses of DQW transistor lasers are compared with single quantum well ones. Simulation results are in agreement with the numerical and experimental results reported by other researchers
Analysis of carrier dynamic effects in transistor lasers
, Article Optical Engineering ; Volume 51, Issue 2 , December , 2012 ; 00913286 (ISSN) ; Mirmoeini, S. Z ; Faez, R ; Sharif University of Technology
2012
Abstract
We present an analytical model to analyze the influence of carrier dynamics on the static and dynamic responses of transistor laser (TL). Our analysis is based on solving the continuity equation and the rate equations which incorporate the virtual states as a conversion mechanism. We show that the details of the dc and small signal behavior of transistor lasers are strongly affected by the escape and capture times of carriers in quantum well (QW). Also, the effects of carrier recombination lifetime in the quantum well and base regions on the TL static and dynamic performances are investigated