Search for: transistors--electronic
Article ACS Nano ; Volume 7, Issue 7 , 2013 , Pages 5757-5762 ; 19360851 (ISSN) ; Sutherland, B. R ; Ren, Y ; Ning, Z ; Simchi, A ; Thon, S. M ; Hoogland, S ; Sargent, E. H ; Sharif University of Technology
Field-effect transistors have been widely used to study electronic transport and doping in colloidal quantum dot solids to great effect. However, the full power of these devices to elucidate the electronic structure of materials has yet to be harnessed. Here, we deploy nanodielectric field-effect transistors to map the energy landscape within the band gap of a colloidal quantum dot solid. We exploit the self-limiting nature of the potentiostatic anodization growth mode to produce the thinnest usable gate dielectric, subject to our voltage breakdown requirements defined by the Fermi sweep range of interest. Lead sulfide colloidal quantum dots are applied as the active region and are treated...
The field effect transistor DNA biosensor based on ITO nanowires in label-free hepatitis B virus detecting compatible with CMOS technology, Article Biosensors and Bioelectronics ; Volume 105 , 15 May , 2018 , Pages 58-64 ; 09565663 (ISSN) ; Sharif University of Technology
Elsevier Ltd 2018
In this paper the field-effect transistor DNA biosensor for detecting hepatitis B virus (HBV) based on indium tin oxide nanowires (ITO NWs) in label free approach has been fabricated. Because of ITO nanowires intensive conductance and functional modified surface, the probe immobilization and target hybridization were increased strongly. The high resolution transmission electron microscopy (HRTEM) measurement showed that ITO nanowires were crystalline and less than 50 nm in diameter. The single-stranded hepatitis B virus DNA (SS-DNA) was immobilized as probe on the Au-modified nanowires. The DNA targets were measured in a linear concentration range from 1fM to 10 µM. The detection limit of...