Sharif Digital Repository

Phase Change Memory (PCM) is an emerging memory technology that has the capability to address the growing demand for memory capacity and bridge the gap between the main memory and the secondary storage. As a resistive memory, PCM is able to store data based on its resistance values. The wide resistance range of PCM makes it possible to store even multiple bits per cell (MLC) rather than a single bit per cell (SLC). Unfortunately, PCM cells suffer from short lifetime. That means PCM cells could tolerate a limited number of write operations, and afterward they tend to permanently stick at a constant value. Limited lifetime is an issue related to PCM memory; hence, in recent years, many studies... 

To address the problem of fast degradation in PCM main memory systems in the presence of severe cell wear-out, this chapter introduces and evaluates some ways to deal with hard error issues in phase change memory. Our observation reveals when some memory pages reach their endurance limits, other pages may be far from their limits even when using a perfect wear-leveling. Recent studies have proposed redirection or correction schemes to alleviate this problem, but all suffer from poor throughput or latency. In this chapter, we also propose On-demand page paired PCM (OD3P) memory system. Our technique mitigates the problem of fast failure of pages by redirecting them onto other healthy pages,... 

Recent developments in Non-Volatile Memories (NVMs) have introduced them as an alternative for SRAMs in on-chip caches. Besides the promising features of NVMs, e.g., near-zero leakage power, immunity to radiation-induced particle strike, and higher density, a major drawback of NVM-based caches is their short lifetime due to limited write endurance. This paper first reveals that in L1 caches, the lifetime of data-cache (D-cache) is about 472x shorter than that of instruction-cache (I-cache) due to extreme imbalance write stress between the two. Then, we propose a technique, so-called Alternating Cache Allocation to Conduct Higher Endurance (A-CACHE), to improve the lifetime of... 

With current memory scalability challenges, Phase-Change Memory (PCM) is viewed as an attractive replacement to DRAM. The preliminary concern for PCM applicability is its limited write endurance that results in fast wear-out of memory cells. Worse, process variation in the deep-nanometer regime increases the variation in cell lifetime, resulting in an early and sudden reduction in main memory capacity due to the wear-out of a few cells. Recent studies have proposed redirection or correction schemes to alleviate this problem, but all suffer poor throughput or latency. In this article, we show that one of the inefficiency sources in current schemes, even when wear-leveling algorithms are used,... 

In this paper, we propose a run-time strategy for managing writes onto last level cache in chip multiprocessors where STT-RAM memory is used as baseline technology. To this end, we assume that each cache set is decomposed into limited SRAM lines and large number of STT-RAM lines. SRAM lines are target of frequently-written data and rarely-written or read-only ones are pushed into STT-RAM. As a novel contribution, a low-overhead, fully-hardware technique is utilized to detect write-intensive data blocks of working set and place them into SRAM lines while the remaining data blocks are candidates to be remapped onto STT-RAM blocks during system operation. Therefore, the achieved cache... 

In this paper, we propose a run-time strategy for managing writes onto last level cache in chip multiprocessors where STT-RAM memory is used as baseline technology. To this end, we assume that each cache set is decomposed into limited SRAM lines and large number of STT-RAM lines. SRAM lines are target of frequently-written data and rarely-written or read-only ones are pushed into STT-RAM. As a novel contribution, a low-overhead, fully-hardware technique is utilized to detect write-intensive data blocks of working set and place them into SRAM lines while the remaining data blocks are candidates to be remapped onto STT-RAM blocks during system operation. Therefore, the achieved cache... 

With current memory scalability challenges, Phase-Change Memory (PCM) is viewed as an attractive replacement to DRAM. The preliminary concern for PCM applicability is its limited write endurance that results in fast wear-out of memory cells. Worse, process variation in the deep-nanometer regime increases the variation in cell lifetime, resulting in an early and sudden reduction in main memory capacity due to the wear-out of a few cells. Recent studies have proposed redirection or correction schemes to alleviate this problem, but all suffer poor throughput or latency. In this article, we show that one of the inefficiency sources in current schemes, even when wear-leveling algorithms are used,... 

Spin-Transfer Torque RAM (STT-RAM) is a promising alternative to SRAM for implementing on-chip L2 and L3 caches. One of the most critical challenges in STT-RAM is reliability due to limited write endurance, which results in insufficient lifetime, as well as various types of errors. Previous studies have focused on either presenting various cache architectures/management techniques to improve the lifetime of STT-RAM caches or utilizing different Error Correcting Codes (ECCs) to protect against the permanent and transient errors. However, there is no quantitative analysis in the literature to determine the impact of ECCs on the lifetime of the STT-RAM caches. This paper formulates this impact... 

Emerging nonvolatile memory technologies, such as spin-transfer torque RAM or resistive RAM, can increase the capacity of the last-level cache (LLC) in a latency and power-efficient manner. These technologies endure 109 - 1012 writes per cell, making a nonvolatile cache (NV-cache) with a lifetime of dozens of years under ideal working conditions. However, nonuniformity in writes to different cache lines considerably reduces the NV-cache lifetime to a few months. Writes to cache lines can be made uniformly by wear-leveling. A suitable wear-leveling for NV-cache should not incur high storage and performance overheads. We propose a novel, simple, and effective wear-leveling technique with... 

In the era of big data, the capability of computer systems must be enhanced to support 2.5 quintillion byte/day data delivery. Among the components of a computer system, main memory has a great impact on overall system performance. DRAM technology has been used over the past four decades to build main memories. However, the scalability of DRAM technology has faced serious challenges. To keep pace with the ever-increasing demand for larger main memory, some new alternative technologies have been introduced. Phase change memory (PCM) is considered as one of such technologies for substituting DRAM. PCM offers some noteworthy properties such as low static power consumption, nonvolatility, and...