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- Type of Document: M.Sc. Thesis
- Language: Farsi
- Document No: 39635 (05)
- University: Sharif University of Technology
- Department: Electrical Engineering
- Advisor(s): Sharif Bakhtiar, Mehrdad
- Abstract:
- There is a strong drive toward handheld communication devices with building blocks that are fully integrated in standard CMOS technologies. Although there are obvious cost, size, and repeatability advantages, it is particularly challenging to implement fully integrated power amplifiers with no external matching in standard CMOS under the large supply variations and harsh load mismatches present in handheld devices. This Project deals with the front-end of an Integrated RFID Reader for the UHF band. The bottleneck of the design is the design of a fully on-chip Power Amplifier. In this thesis, a new method is introduced to increase transistors breakdown voltage in a class E power amplifier. Using four switches in the paths of the signals feeded to the antenna, we have combined differential and complementary amplifiers. In this method, we have been able to double the breakdown voltage of the transistors combination. Also we design a class F power amplifier with some off-chip components. The designs have been simulated in ADS and Cadence. The technology that has been used is TSMC 0.18um.
- Keywords:
- Efficiency ; Radio Frequency Identification (RFID) Reader ; Radio Frequency Identification (RFID)Tags ; Complementary Metal Oxide Semiconductor Technology (CMOS) ; Switching Power Amplifier ; Power Added Efficiency (PAE)
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