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- Type of Document: M.Sc. Thesis
- Language: Farsi
- Document No: 40120 (05)
- University: Sharif University of Technology
- Department: Electrical Engineering
- Advisor(s): Faez, Rahim
- Abstract:
- Conventionally all objects radiate most of its energy in the from of infrared waves, therefore, infrared photodetectors for detecting objects is important and more study is done on improve the detecting parameters. The proposed structures are developed from bulk to quantum well and quantum dots in recently years. In this work at reason insensitivity to incident light polarization, flexible operation wavelength, high operation temperature, inherent photovoltaic effect, low capture probability we study the structure of quantum dot infrared photodetectors and then for improve the detecting parameters structure of two layers quantum dot separated with a layer thin barrier (bilayer). And then a comparision is made between structure of bilayer and large and small quantum dots. in simulation, we calculate eign value and eign function by effective mass approximation method and then intersubband absorption coefficient, carrier capture probability by quantum dot (optical gain) and in continuance, spectral response, dark current by transfer matrix method and detectivity. In this detector perefer to use intersublevel transitions positioned at mid of large conduction band offset material (GaAs/InAs). spectral response of the detector is in the mid infrared region (MIR) and structure of bilayer quantum dot have multi color response and applied to multi band quantum dot infrared photodetectors.
- Keywords:
- Infrared Detector ; Quantum Dot ; Dark Current ; Photoresponse ; Detectivity ; Absorption Coefficent
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