, M.Sc. Thesis Sharif University of Technology ; Moshfegh, Alireza (Supervisor)
Abstract
ZnO is a wide and direct band gap (3.37 eV) semiconducting material with a large exciton binding energy (60 meV). It has been extensively studied in the last few years owing to its potential applications in various fields such as surface acoustic wave devices (SAW), transparent electrode, solar cell windows, photovoltaic devices, gas sensors and photoelectrochemical cells. Recently, much attention has been paid to rare-earth (RE) doped ZnO for possible applications in visible emitting phosphors in displays, high power lasers, and other optoelectronic devices. In this thesis, initially ZnO thin films were deposited on glass and ITO substrates using sol-gel dip-coating method. Optical and...
Cataloging brief, M.Sc. Thesis Sharif University of Technology ; Moshfegh, Alireza (Supervisor)
Abstract
ZnO is a wide and direct band gap (3.37 eV) semiconducting material with a large exciton binding energy (60 meV). It has been extensively studied in the last few years owing to its potential applications in various fields such as surface acoustic wave devices (SAW), transparent electrode, solar cell windows, photovoltaic devices, gas sensors and photoelectrochemical cells. Recently, much attention has been paid to rare-earth (RE) doped ZnO for possible applications in visible emitting phosphors in displays, high power lasers, and other optoelectronic devices. In this thesis, initially ZnO thin films were deposited on glass and ITO substrates using sol-gel dip-coating method. Optical and...
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