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- Type of Document: M.Sc. Thesis
- Language: Farsi
- Document No: 40477 (05)
- University: Sharif University of Technology
- Department: Electrical Engineering
- Advisor(s): Faez, Rahim
- Abstract:
- This thesis completely introduses ferromagnetic single electron transistor while that identifies the application and types of the transistor.Master equation is used for simulationing of the transistor. This simulation is divided to two general sections.In the first section proposed thermal equilibrium the normal island and The two spin subsystems , however, are in thermal equilibrium and quantized nature of energy spectrum of a small central electrode and fluctuations in the spin accumulation were ignored , however, we simplify the problem and assume that the charging energy are independent of the electron distribution, and number of electrons in the normal island. ،hat tunnel rates can be easily calculatedfrom the orthodox theory.current flows mechanism in parallel an antiparallel orientation are analyzed in this sequent.first , The influence of the bias voltage variation even the effects of the gate voltage variation are indicated.secondly, The influence of increasing bias voltage dependence current flow variation of is shown.thirdly The influence of the resistance of the junctions dependence of current flow variation is shown. Finally The influence of increasing bias voltage dependence of magnetoresistance and The influence of increasing temperature are indicated. In the second section ,small island is proposed. Quantized nature of energy spectrum of a small central electrode are considered. The discrete structure of its energy spectrum plays a significant role with a small central electrode .In the regime , the level spacing is more than thermal energy , however, are not in thermal equilibrium,so the distribution function in island can not be approximated by the Gibbs distribution. The results of proposed simulation confirm The results that by varying the thickness of the normal metal channel on the scale of the mean free path the surface contribution to spin relaxation was measured.The results confirm that for Al surface scattering makes a weak contribution to the overall spin relaxation rate as rate as the thickness of the Islands that are under 33nm .in the addition.The results for the different Islands material confirm that the size of the island must be small for heavy elements in order to observe big effects of the spinaccumulation, the result that should be important for a number of proposed thin film spin-based devices.
- Keywords:
- Magnetic Resistance ; Single Electron Transistor ; Spin Relaxation ; MAGNETIC RESISTANCE ; Magnetic Single Electron Transistor ; Orthdox
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