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Zamzamian, Mehrdad | 2013

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 44829 (46)
  4. University: Sharif University of Technology
  5. Department: Energy Engineering
  6. Advisor(s): Vosoughi, Nasser
  7. Abstract:
  8. High purity Germanium (HPGe) detector is a sub branch of semiconductor detectors which has very good resolution, very little dead time, able tobuild in large dimensions and suitable for any condition that it is using in vast fields from space investigation to radiation therapy. this detector is usually used to detecting gamma radiations furthermore the best resolution can be attained with decreasing leakage current. for analyzing about operation of the HPGe detector, it needs to initiate a model of this detector. in this studing has been used modelGEM-15190,POP-TOP which is built by ortec company. for initiating, it was used liquid nitrogen and accessory equipments like high voltage supply, amplifier, multi channel analyzer and computer and then parameters of this model of HPGe detector like efficiency, virtual point detector,full width at half maximum (FWHM), resolution, fano factor and sensivity to high voltage supply was earned. for benchmarking of results MCNP Monte Carlo code used. a disadvantage of HPGe detectors is great depending to liquid nitrogen, if the detector initiate without liquid nitrogen, it will be serious damage(of course, in this condition in newer models, the detector will off automatically) so for this reason, room temperature compound semicondutors are a solution that a detector basis on a kind of compound semiconductor was simulated with MCNP code till it can be compared with HPGe results
  9. Keywords:
  10. High Purity Germanium ; Monte Carlo Simulation ; Intrinsic Efficiency ; Intrinsic Absolute ; Fano Factor ; Virtual Point ; Room-Temperature Semiconductor Detector

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