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Deposition of Nanostructure Antimony Doped Tin Oxide (ATO) on Glass By Sol-Gel

Royaei, Neda | 2013

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 45058 (07)
  4. University: Sharif University of Technology
  5. Department: Materials Science and Engineering
  6. Advisor(s): Dolati, Abolghasem
  7. Abstract:
  8. Antimony Doped tin oxide as a conductive film has found a wide range of applications and sol-gel method has so advantageous with respect to another methods for preparing ATO thin films. In this study, ATO thin film has been synthesized using a solution containing metal salts of tin chloride and antimony chloride. The microstructure of the obtained films was studied by applying scanning electron microscopy (SEM) and X-ray diffraction patterns (XRD). In diffraction patterns of the acquired ATO layers which was deposited from a sol containing SnCl4.5H2O and SnCl2.2H2O with Sb concentration of 15%mol and layers which was deposited from a sol containing SnCl4.5H2O with Sb concentration of 15%mol and Ag concentration of 10%mol, the characteristic peaks of tin oxide and crystalline phase of SnO2 was appeared. This reveals that the doped elements of Sb and Ag have not create a second phase with SnO2. Moreover, the grain structure for ATO film which was obtained in SnCl4.5H2O solution was finer compared with that in SnCl2.2H2O solution and dopping of Ag resulted in a finer grain microstructure. The SEM micrographs revealed that the presence of SiO2 as a barrier layer prevents the diffusion of sodium ion toward the ATO thin film and the minimum density of cracks was observed in ATO layer with 10% Sb. Additionally, the presence of Ag has not an inappropriate effect on morphological characteristics of ATO thin films. The electrical properties was investigated in terms of sheet resistant of ATO films and was measured by using 4-point probe and it was found that Sb doping reduce the surface resistance of ATO layers. It was observed that the addition of Sb reduce remarkably the electrical resistant of ATO layers. Also, the minimum electrical resistance was obtained in ATO film with 10% Sb. More decrement of sheet resistant was achievable by applying a SiO2 barrier layer, addition of 10% Ag dopant and increasing of sintering temperature up to 450 C. The optical properties of obtained ATO layers was investigated through UV-Vis studies and it was found that the transmittance of ATO thin films with 10% Sb was maximum and it was measured about 95.5%. Also, this film resulted in minimum band gap energy of 3.87 ev
  9. Keywords:
  10. Tin Oxide ; Antimony ; Sol-Gel Method ; Antimony Doped Tin Oxide

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