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A comparative study of NEGF and DDMS models in the GAA silicon nanowire transistor

Hosseini, R ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1080/00207217.2012.669709
  3. Abstract:
  4. In this article, we have used quantum and semiclassical models to analyse the electrical characteristics of gate all around silicon nanowire transistor (GAA SNWT). A quantum mechanical transport approach based on non-equilibrium Green's function (NEGF) method with the use of mode space approach in the frame work of effective mass theory has been employed for this analysis. Semiclassical drift diffusion mode space (DDMS) approach has also been used for the simulation of GAA SNWT. We have studied the short-channel effects on the performance of GAA SNWT and evaluated the variation of the threshold voltage, the subthreshold slope (SS), the leakage current and the drain-induced barrier lowering (DIBL) when channel length gets shorter. The results showed that quantum mechanical effects increase the threshold voltage and decrease the leakage current, whereas it has also an impact on the SS and DIBL. We have also investigated the effects of high- materials as gate dielectric on the device performance
  5. Keywords:
  6. DDMS ; High- materials ; Short-channel effects ; Channel length ; Comparative studies ; Device performance ; Drain-induced barrier lowering ; Drift diffusion ; Effective-mass theory ; Electrical characteristic ; Frame-work ; GAA SNWT ; Gate-all-around ; NEGF ; Non-equilibrium Green's function ; Quantum mechanical ; Quantum mechanical effects ; Semiclassical model ; Short-channel effect ; Silicon nanowire transistors ; Subthreshold slope ; Gate dielectrics ; Nanowires ; Quantum theory ; Threshold voltage ; Gallium alloys
  7. Source: International Journal of Electronics ; Volume 99, Issue 9 , 2012 , Pages 1299-1307 ; 00207217 (ISSN)
  8. URL: http://www.tandfonline.com/doi/abs/10.1080/00207217.2012.669709