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Numerical investigation on the temperature dependence of the cylindrical-gate-all-arounD Si-NW-FET

Sedigh Zyiabari, S. A ; Sharif University of Technology | 2011

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  1. Type of Document: Article
  2. DOI: 10.1142/S0217984911027546
  3. Publisher: 2011
  4. Abstract:
  5. We report the results of our numerical investigation on the temperature dependence of the characteristics of the cylindrical gate-all-around Si nanowire field effect transistor (Si-NW-FET). Assuming the effect of temperature on the energy band structure of Si just like the effect of strain, we simulate the transistor characteristics at various temperatures (50 K ≤ T ≤ 300 K). In this investigation, we demonstrate the temperature dependence of the transistor sub-threshold swing and the threshold voltage are both linear functions of the temperature, represented by 61.5 × (T/300) + 63.4 (mV/decade) and 220140 × (T/300-1) (mV). By calculating the IDS - T characteristics for VDS = 0.4 V and various VGS, we show that the temperature sensitivity of the drain current defined as the slope of the IDS - T plot, for a given VGS, is independent of the temperature and increases with VGS in a quadratic manner [- 150 × (VGS - 0.50)2 + 8.5 (nA/K)]. Ultimately, the dependence of the transistor delay time on temperature will be presented
  6. Keywords:
  7. Energy band structure ; Si-nanowire field effect transistor (NW-FET) ; temperature sensitivity
  8. Source: Modern Physics Letters B ; Volume 25, Issue 29 , 2011 , Pages 2269-2278 ; 02179849 (ISSN)
  9. URL: http://www.worldscientific.com/doi/abs/10.1142/S0217984911027546