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Electrochemical investigation of ITO-metal correlation accordance to metal thickness

Heidaripour, A ; Sharif University of Technology | 2015

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  1. Type of Document: Article
  2. DOI: 10.1007/s13738-015-0613-0
  3. Publisher: Springer Verlag , 2015
  4. Abstract:
  5. Abstract The role of the work function and Fermi level is significant in the performance of the photo-electrochemical cells. We report that a correlation exists between work function and thickness of deposited thin film metals (e.g., Zn, Pb, Co, and Cu). The potential difference between a metal and a reference electrode is used as a rough approach for investigation of work function or the Fermi level. Metal thickness was calculated using faradic current during electrodeposition and further investigated by X-ray diffraction technique. The results show that when thickness decreases the potential also decreases (becomes positive) and the Fermi level of metals electrodeposited on the indium tin oxide (ITO) approaches to the ITO valence band. The potential of the ITO/metal with regard to metal thickness shifts down or upward with respect to vacuum scale and the Fermi level of metal correlates with the valence or conduction band, respectively
  6. Keywords:
  7. Electrochemical technique ; Fermi level ; ITO ; Metal ; Potential ; Thickness
  8. Source: Journal of the Iranian Chemical Society ; Volume 12, Issue 8 , 2015 , Pages 1447-1455 ; 1735207X (ISSN)
  9. URL: http://link.springer.com/article/10.1007%2Fs13738-015-0613-0