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Photo-detector diode based on thermally oxidized TiO2 nanostructures/p-Si heterojunction

Hosseini, Z. S ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1063/1.4937546
  3. Publisher: American Institute of Physics Inc
  4. Abstract:
  5. Titanium oxide (TiO2)-based photodetectors were fabricated using a thermal oxidation technique. The effect of two different annealing temperatures on morphology, structure, and I-V characteristics has been investigated. TiO2/Si heterostructure exhibited diode-like rectifying I-V behavior both in dark and under illumination. Dependence in photoresponse on annealing temperature was observed that was related to effective surface area of quasi-one-dimensional TiO2 nanostructures. Fabricated TiO2/Si diodes in 850 °C as the lower annealing temperature showed higher responsivity and sensitivity compared with grown ones in 950 °C (R850 °C/R950 °C ∼ 5 and S850 °C/S950 °C ∼ 1.6). Rather good photoresponse and simple fabrication process make the 850 °C-TiO2/Si diode a promising candidate for practical applications
  6. Keywords:
  7. Annealing ; Diodes ; Fabrication ; Heterojunctions ; Nanostructures ; Photodetectors ; Titanium oxides ; Annealing temperatures ; Effective surface area ; Fabrication process ; IV characteristics ; Photoresponses ; Quasi-one dimensional ; Thermal oxidation ; Thermally oxidized ; Titanium dioxide
  8. Source: Journal of Applied Physics ; Volume 119, Issue 1 , 2016 ; 00218979 (ISSN)
  9. URL: http://aip.scitation.org/doi/10.1063/1.4937546