Silicon Vacancy in 4H-SiC: Many-body Electronic Structure, M.Sc. Thesis Sharif University of Technology ; Vesaghi, Mohammad Ali (Supervisor)
Abstract
The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing. 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect spin states. Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) investigations suggest that silicon vacancy point defects in SiC possess properties similar to those of the NV center in diamond. We provide a new theoretical frame to explain a wider range of experimental results. Employing a proposed generalized Hubbard model, with the help of electronic structure programs, DFT, second quantization, and various computational approaches, we obtain new...
Cataloging briefSilicon Vacancy in 4H-SiC: Many-body Electronic Structure, M.Sc. Thesis Sharif University of Technology ; Vesaghi, Mohammad Ali (Supervisor)
Abstract
The silicon vacancy in silicon carbide is a strong emergent candidate for applications in quantum information processing. 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect spin states. Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) investigations suggest that silicon vacancy point defects in SiC possess properties similar to those of the NV center in diamond. We provide a new theoretical frame to explain a wider range of experimental results. Employing a proposed generalized Hubbard model, with the help of electronic structure programs, DFT, second quantization, and various computational approaches, we obtain new...
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