Design of a Low Power and Robust SRAM Cell Based on FinFET, M.Sc. Thesis Sharif University of Technology ; Hesabi, Shahin (Supervisor) ; Moaiyeri, Mohammad Hossein (Supervisor)
Abstract
By scaling the technology node, leakage power and process variations emerge as the two important factors to design a chip. Static power becomes more important when the number of portable devices which spend most of the time in the idle mode is increasing.Process variations lessen performance, reliability and lead to more leakage power. To mitigate these limitations multiple devices have been proposed to displace Bulk MOSFET.Among these devices we can name FinFET and CNTFET transistors. FinFET transistors due to their superior gate control in compare to Bulk MOSFETs transistor have shown lesser short channel effects, more scalability, more I_on to I_off ratio and lesser process variations....
Cataloging briefDesign of a Low Power and Robust SRAM Cell Based on FinFET, M.Sc. Thesis Sharif University of Technology ; Hesabi, Shahin (Supervisor) ; Moaiyeri, Mohammad Hossein (Supervisor)
Abstract
By scaling the technology node, leakage power and process variations emerge as the two important factors to design a chip. Static power becomes more important when the number of portable devices which spend most of the time in the idle mode is increasing.Process variations lessen performance, reliability and lead to more leakage power. To mitigate these limitations multiple devices have been proposed to displace Bulk MOSFET.Among these devices we can name FinFET and CNTFET transistors. FinFET transistors due to their superior gate control in compare to Bulk MOSFETs transistor have shown lesser short channel effects, more scalability, more I_on to I_off ratio and lesser process variations....
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