Design and Implementation of a X Band Front-end Receiver in GaAs Technology, M.Sc. Thesis Sharif University of Technology ; Medi, Ali (Supervisor)
Abstract
This thesis begins in an attempt to design an X band front-end receiver in GaAs pHEMT technology, suitable for microwave circuits which should be high frequency, low noise, high gain, as well as high power handling and should have stable characteristics at large number of productions. The front-end receiver consists of three blocks, namely limiter, low noise amplifier, and mixer, which are designed in ISDL group previously. The measurement result of the fabricated low noise amplifier was satisfactory, since it was close to its simulation result. However, due to the drawbacks of modeling the switching behavior of devices, the results of the two other blocks, i.e., limiter and mixer – which...
Cataloging briefDesign and Implementation of a X Band Front-end Receiver in GaAs Technology, M.Sc. Thesis Sharif University of Technology ; Medi, Ali (Supervisor)
Abstract
This thesis begins in an attempt to design an X band front-end receiver in GaAs pHEMT technology, suitable for microwave circuits which should be high frequency, low noise, high gain, as well as high power handling and should have stable characteristics at large number of productions. The front-end receiver consists of three blocks, namely limiter, low noise amplifier, and mixer, which are designed in ISDL group previously. The measurement result of the fabricated low noise amplifier was satisfactory, since it was close to its simulation result. However, due to the drawbacks of modeling the switching behavior of devices, the results of the two other blocks, i.e., limiter and mixer – which...
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