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Incorporation of CsPbI3 Perovskite Quantum Dots as Interrfacial Layer for Highly Efficient Cs0.05MA0.95PbI3 Perovskite Solar Cells

Kamraninejad, Vahid | 2022

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 55228 (07)
  4. University: Sharif University of Technology
  5. Department: Materials Science and Engineering
  6. Advisor(s): Simchi, Abdolreza
  7. Abstract:
  8. Despite the excellent photovoltaic performance of perovskite solar cells (PSCs), the instability of PSCs under severe environment (e.g., humidity, intense light) limits further commercialization of such devices. Therefore, in recent years, many researches are conducted on utilizing Perovskite Quantum Dots (PQDs) to enhance performance of PSCs. Herein, CsPbI3 PQDs interfacial layer is incorporated in the perovskite/hole transport material (HTM) interface, on the purpose of increasing charge carrier mobility and preventing electron-hole recombination to increase performance of the PSCs. CsPbI3 PQDs is synthesized at 170℃ with oleic acid and oleylamine as organic ligands by hot-injection method. The edge-absorption wavelength and bandgap of CsPbI3 PQDs solution are 661 nm and 1.81 eV, respectively, characterized by the UV-Visible absorption test. The spin-coated thin layer of CsPbI3 QDs washed by MeOAc (MeOAc:QDs, 1:1 v:v) as an anti-solvent to remove their ligands. The XRD test is done for QDs thin layer to characterized CsPbI3 phase and the CsPbI3 PQDs thin layer edge-absorption and its bandgap are 748 nm and 1.67 eV, respectively. The device configuration (n-i-p) modified by QDs is FTO/SnO2/Cs0.05MA0.095PbI3/CsPbI3 QDs/CIS/C. The photovoltaic parameters of the QDs modified devices include PCE, VOC, JSC and FF are 58.08 ± 0.75 %, 0.99 ± 0.01 V, 13.934 ± 0.983 mA/cm2 and 7.96 ± 0.38%, respectively and the photovoltaic parameters of the reference devices include PCE, VOC, JSC and FF are 54.99 ± 3.04 %, 0.98 ± 0.02 V, 13.553 ± 1.135 mA/cm2 and 7.27 ± 1.25 %, respectively. All of the PSCs modified by CsPbI3 PQDs shows significantly higher average photovoltaic parameters and lower standard deviation than the reference ones. Increasing the average and decreasing the standard deviation of the photovoltaic parameters guarantees solar cell fabrication with better performance and decreases the number of solar cells with much lower performance than the average. Furthermore, all of the reference devices are destructed completely after 14 days (their efficiencies decreased to lower than 30% of their initial values) and better protection against harmful environmental factors and good stability are obtained for the QDs modified solar cells. The photovoltaic parameters of the champion QDs modified device after 14 days include PCE, VOC, JSC and FF are 45.04 %, 0.88 V, 14.057 mA/cm2 and 5.59 %, respectively
  9. Keywords:
  10. Stability ; Perovskite ; Quantum Dot ; Carrier Transport ; Photovoltaic System ; Perovskite Quantum Dots (PQDs) ; Diffuse Interface

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