Incorporation of CsPbI3 Perovskite Quantum Dots as Interrfacial Layer for Highly Efficient Cs0.05MA0.95PbI3 Perovskite Solar Cells, M.Sc. Thesis Sharif University of Technology ; Simchi, Abdolreza (Supervisor)
Abstract
Despite the excellent photovoltaic performance of perovskite solar cells (PSCs), the instability of PSCs under severe environment (e.g., humidity, intense light) limits further commercialization of such devices. Therefore, in recent years, many researches are conducted on utilizing Perovskite Quantum Dots (PQDs) to enhance performance of PSCs. Herein, CsPbI3 PQDs interfacial layer is incorporated in the perovskite/hole transport material (HTM) interface, on the purpose of increasing charge carrier mobility and preventing electron-hole recombination to increase performance of the PSCs. CsPbI3 PQDs is synthesized at 170℃ with oleic acid and oleylamine as organic ligands by hot-injection...
Cataloging briefIncorporation of CsPbI3 Perovskite Quantum Dots as Interrfacial Layer for Highly Efficient Cs0.05MA0.95PbI3 Perovskite Solar Cells, M.Sc. Thesis Sharif University of Technology ; Simchi, Abdolreza (Supervisor)
Abstract
Despite the excellent photovoltaic performance of perovskite solar cells (PSCs), the instability of PSCs under severe environment (e.g., humidity, intense light) limits further commercialization of such devices. Therefore, in recent years, many researches are conducted on utilizing Perovskite Quantum Dots (PQDs) to enhance performance of PSCs. Herein, CsPbI3 PQDs interfacial layer is incorporated in the perovskite/hole transport material (HTM) interface, on the purpose of increasing charge carrier mobility and preventing electron-hole recombination to increase performance of the PSCs. CsPbI3 PQDs is synthesized at 170℃ with oleic acid and oleylamine as organic ligands by hot-injection...
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