Calculating the Bandstructure of eSoM2-BN-Gr_h Heterostructure and Its Hopping Parameters for Tight Binding, M.Sc. Thesis Sharif University of Technology ; Rahim, Faez (Supervisor)
Abstract
The purpose of this research is to introduce a heterostructure for Vertical Tunneling Field-Effect Transitors, calculating its band structure and finding the tight binding hopping parameters of its structure. To do this, we must first study different kinds of heterostructures and choose the most suitable one among them. In this research, we selected the three-layer graphene eSoM2-BN-Gr_h for its high on/off current ratio (〖10〗^6). To find the band structure, first we should construct unit cell and then find its crystal structure after relaxation. The lattice constant for graphene and is the same, but the lattice constant of graphene andeSoM2-BN-Gr_h is different . The number of atoms in the...
Cataloging briefCalculating the Bandstructure of eSoM2-BN-Gr_h Heterostructure and Its Hopping Parameters for Tight Binding, M.Sc. Thesis Sharif University of Technology ; Rahim, Faez (Supervisor)
Abstract
The purpose of this research is to introduce a heterostructure for Vertical Tunneling Field-Effect Transitors, calculating its band structure and finding the tight binding hopping parameters of its structure. To do this, we must first study different kinds of heterostructures and choose the most suitable one among them. In this research, we selected the three-layer graphene eSoM2-BN-Gr_h for its high on/off current ratio (〖10〗^6). To find the band structure, first we should construct unit cell and then find its crystal structure after relaxation. The lattice constant for graphene and is the same, but the lattice constant of graphene andeSoM2-BN-Gr_h is different . The number of atoms in the...
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