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Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer
Shokri, A. A ; Sharif University of Technology | 2004
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- Type of Document: Article
- DOI: 10.1140/epjb/e2004-00371-x
- Publisher: 2004
- Abstract:
- The temperature and voltage dependence of spin transport is theoretically investigated in a new type of magnetic tunnel junction, which consists of two ferromagnetic outer electrodes separated by a ferromagnetic barrier and a nonmagnetic (NM) metallic spacer. The effect of spin fluctuation in magnetic barrier, which plays an important role at finite temperature, is included by taking the mean-field approximation. It is found that, the tunnel magnetoresistance (TMR) and the electron-spin polarization depend strongly on the temperature and the applied voltage. The TMR and spin polarization at different temperatures show an oscillatory behavior as a function of the NM spacer thickness. Also, the amplitude of these oscillations is regularly reduced when the temperature increases. The maximum TMR value, varies approximately from 270% in reverse bias (at T = 0 K) to 25% in forward bias (at T ≥ To). © EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2004
- Keywords:
- Charge carriers ; Thermal effects ; Polarization ; Magnetoresistance ; Magnetization ; Magnetic semiconductors ; Electron transport properties ; Ferromagnetic materials ; Electric potential
- Source: European Physical Journal B ; Volume 42, Issue 2 , 2004 , Pages 187-191 ; 14346028 (ISSN)
- URL: https://link.springer.com/article/10.1140/epjb/e2004-00371-x