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Nanoplasma-Based millimeter-wave modulators on a single metal layer

Samizadeh Nikoo, M ; Sharif University of Technology | 2022

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  1. Type of Document: Article
  2. DOI: 10.1109/LED.2022.3187456
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2022
  4. Abstract:
  5. Fundamental constraints imposing power-frequency trade-offs in conventional electronics have stimulated research on alternative technologies for millimeter-wave and sub-millimeter-wave applications. In this work, we use the picosecond threshold firing of nanoplasma switches to demonstrate on-chip millimeter-wave modulators that rely only on a single metal layer. We show amplitude shift keying (ASK) modulation with self-synthesized carrier frequencies up to 66 GHz (limited by the bandwidth of our experimental setup), with output powers up to 30 dBm. These all-metal nanoplasma modulators are low cost, and generally compatible with different platforms, from CMOS and III-V compounds to flexible substrates. Our work paves the way towards future terahertz communication circuits with large output powers, which otherwise are not practical using high-power amplifiers at frequencies over 100 GHz. In a more general context, the proposed all-metal circuits can potentially synthesize arbitrarily-shaped ultra-wide-band (UWB) signals with applications in advanced wireless communications, radars, and imaging systems. © 1980-2012 IEEE
  6. Keywords:
  7. All-metal circuits ; ASK ; Millimeter-wave ; Terahertz ; Amplitude shift keying ; Bandpass filters ; Bandwidth ; Economic and social effects ; III-V semiconductors ; Metals ; Millimeter waves ; Modulators ; Terahertz waves ; Timing circuits ; Ultra-wideband (UWB) ; All metal ; All-metal circuit ; Fundamental constraints ; Nanoplasma switch ; Nanoplasmas ; Nanoscale device ; Output power ; Power- generations ; Single metal layers ; Tera Hertz ; Power amplifiers
  8. Source: IEEE Electron Device Letters ; Volume 43, Issue 8 , 2022 , Pages 1355-1358 ; 07413106 (ISSN)
  9. URL: https://ieeexplore.ieee.org/document/9810948