Simulation of deep level traps effects in quantum well transistor laser

Horri, A ; Sharif University of Technology | 2013

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  1. Type of Document: Article
  2. DOI: 10.1007/s10825-013-0495-2
  3. Publisher: 2013
  4. Abstract:
  5. In this paper, we present an analytical model to analyze the influence of deep level traps on the static and dynamic responses of transistor laser (TL). Our analyze is based on analytically solving the continuity equation and rate equations including the effect of the deep level trap (DLT), which incorporate the virtual states as a conversion mechanism. The results of simulation show that the main characteristics of laser such as threshold current, quantum efficiency, output power, and modulation bandwidth are affected by total density of traps in the active region
  6. Keywords:
  7. Deep level traps (DLTs) ; Semiconductor laser ; Transistor laser (TL) ; Continuity equations ; Conversion mechanism ; Deep level trap ; Modulation bandwidth ; Self-pulsing ; Static and dynamic response ; Threshold currents ; Transistor lasers ; Dynamic response ; Quantum efficiency ; Semiconductor lasers ; Quantum well lasers
  8. Source: Journal of Computational Electronics ; Volume 12, Issue 4 , August , 2013 , Pages 812-815 ; 15698025 (ISSN)
  9. URL: http://link.springer.com/article/10.1007%2Fs10825-013-0495-2