Analysis of deep level trap effects in transistor lasers

Horri, A ; Sharif University of Technology | 2013

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  1. Type of Document: Article
  2. Publisher: 2013
  3. Abstract:
  4. In this paper we present an analytical model to analyze the influence of deep level traps on the static and dynamic responses of transistor laser (TL). Our analysis is based on analytically solving the continuity equation and rate equations including the effect of the deep level trap (DLT), which incorporates the virtual states as a conversion mechanism. The results of simulation show that the main characteristics of laser such as threshold current, quantum efficiency, output power, and modulation bandwidth are affected by total density of traps in the active region
  5. Keywords:
  6. Modulation bandwidth ; Deep level trap (DLT) ; Semiconductor laser ; Threshold current ; Transistor laser (TL) ; Continuity equations ; Conversion mechanism ; Deep level trap ; Self pulsing ; Self-pulsing ; Static and dynamic response ; Threshold currents ; Transistor lasers ; Dynamic response ; Semiconductor lasers ; Quantum efficiency
  7. Source: Lasers in Engineering ; Volume 25, Issue 5-6 , 2013 , Pages 313-322 ; 08981507 (ISSN)