Large signal analysis of double quantum well transistor laser

Horri, A ; Sharif University of Technology | 2013

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  1. Type of Document: Article
  2. DOI: 10.1007/s11082-012-9641-5
  3. Publisher: 2013
  4. Abstract:
  5. In this paper, we present an analytical model for the large-signal analysis of the double quantum well (DQW) transistor laser. Our model is based on solving the continuity equation and the rate equations which incorporate the virtual states as a conversion mechanism. By using the presented model, effects of barrier width on DQW transistor laser static and dynamic performances are investigated. Also the static and dynamic responses of DQW transistor lasers are compared with single quantum well ones. Simulation results are in agreement with the numerical and experimental results reported by other researchers
  6. Keywords:
  7. Barrier width ; Double quantum well (DQW) ; Transistor laser (TL) ; Barrier widths ; Continuity equations ; Conversion mechanism ; Double-quantum-wells ; Large-signal analysis ; Static and dynamic performance ; Static and dynamic response ; Transistor lasers ; Dynamic response ; Transistors ; Semiconductor quantum wells
  8. Source: Optical and Quantum Electronics ; Volume 45, Issue 5 , 2013 , Pages 389-399 ; 03068919 (ISSN)
  9. URL: http://link.springer.com/article/10.1007%2Fs11082-012-9641-5