Simulation of a carbon nanotube field effect transistor with two different gate insulators

Fallah, M ; Sharif University of Technology | 2013

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  1. Type of Document: Article
  2. Publisher: Sharif University of Technology , 2013
  3. Abstract:
  4. In this paper, a novel structure for MOSFET like CNTFETs (MOSCNTs) is proposed, combining the advantages of both high and low dielectrics to improve output characteristics. In this structure, the gate dielectric at the drain side is selected from a material with low dielectric constant to form smaller capacitances, while a material with high dielectric constant is selected at the source side to improve on current and reduce leakage current. The new structure is simulated based on the Schrödinger-Poisson formulation. Obtained results show that the proposed configuration has lower off and higher on current in comparison with low-k MOSCNTs. Also, using a two-dimensional model, a wide range of new structure performance parameters is studied. It is found that transconductance, intrinsic cut-off frequency and quantum capacitance parameters are improved compared to MOSCNTs with low dielectric constant. It is clear that the proposed structure can provide DIBL and subthreshold swing near its theoretical limit, while it also profits from smaller capacitances in gate, drain and source in comparison with high-k MOSCNTs
  5. Keywords:
  6. Carbon nanotube FET ; Schrodinger-poisson formalism ; Simulation ; Two-dimensional model ; Capacitance ; Carbon ; Carbon nanotubes ; Dielectric materials ; Drain current ; Field effect transistors ; Gate dielectrics ; Transconductance ; Yarn ; High dielectric constants ; Low dielectric constants ; Output characteristics ; Quantum capacitance ; Structure performance ; Two dimensional model ; Carbon nanotube field effect transistors ; Dielectric property ; Electric field ; Electrical conductivity ; Insulation ; Quantum mechanics
  7. Source: Scientia Iranica ; Volume 20, Issue 6 , 2013 , Pages 2332-2340 ; 10263098 (ISSN)
  8. URL: http://www.scientiairanica.com/en/ManuscriptDetail?mid=178