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Analysis of the various elements of heat sources in silicon carbide polymers (6H-SiC and 3C-SiC) semiconductor laser

Marjani, S ; Sharif University of Technology | 2012

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  1. Type of Document: Article
  2. Publisher: 2012
  3. Abstract:
  4. In the present paper, we investigated the various elements of heat sources within a silicon carbide polymers (6H-SiC and 3C-SiC) semiconductor laser. The device employs 3C-SiC quantum well (QW) which is sandwiched between two layers of 6H-SiC as cladding regions that can be interpreted in terms of a type-II heterostructure character and a built-in electric field due to the pyroelectricity of 6H using a numerical simulator. The basic design goal was the study of the various elements of heat sources, including the Joule heat power, the Peltier-Thomson heat power and the recombination heat power
  5. Keywords:
  6. Heat sources ; Modeling ; Semiconductor laser ; Silicon carbide polymers
  7. Source: Asian Journal of Chemistry ; Volume 24, Issue 5 , 2012 , Pages 2333-2335 ; 09707077 (ISSN)
  8. URL: http://www.asianjournalofchemistry.co.in/user/journal/viewarticle.aspx?ArticleID=24_5_109