Analysis and design of semiconductor laser with silicon carbide polymers (6H-SiC and 3C-SiC)

Marjani, S ; Sharif University of Technology | 2011

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  1. Type of Document: Article
  2. Publisher: 2011
  3. Abstract:
  4. In the present work, a new structure of the strained quantum-well (QW) laser diode is designed and simulated. In this structure, the active region consists of tow 6H-SiC barrier and 3C-SiC quantum well (QW)which is sandwiched between two layers of 6H-SiC that can be interpreted in terms of a type-II heterostructure character and a built-in electric field due to the pyroel ectricity of 6H using an industrial-based numerical simulator. The basic design goal was to decrease the threshold current by using only silicon carbide polymers. We could obtain a working model at stable optical wavelength of 0.83μm. This paper provides key results of the device characteristics, including the light power versus electrical current and the optical wavelength versus electrical current
  5. Keywords:
  6. Modeling ; Semiconductor laser ; Silicon carbide polymers
  7. Source: Australian Journal of Basic and Applied Sciences ; Volume 5, Issue 7 , 2011 , Pages 1060-1063 ; 19918178 (ISSN)