The effects of recombination lifetime on efficiency and JV characteristics of InxGa1-xN/GaN quantum dot intermediate band solar cell

Es'Haghi Gorji, N ; Sharif University of Technology | 2010

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  1. Type of Document: Article
  2. DOI: 10.1016/j.physe.2010.05.014
  3. Publisher: 2010
  4. Abstract:
  5. We introduce a new third generation of solar cell structure which inserts different-sized quantum dots in the active region of a pin structure. Generating an intermediate band in the bandgap of the host material makes a good overlap with a part of solar spectrum. The effect of the recombination mechanisms on efficiency and currentvoltage characteristics of this intermediate band solar cell is calculated. We deduce that the increase in recombination lifetime of the excited carriers can improve the characteristics of this structure. This result can be a route which helps us to take the effect on solar cell characteristics into consideration
  6. Keywords:
  7. Energy conversion efficiency ; QD intermediate solar cells ; Active regions ; Band gaps ; Excited carriers ; Host materials ; InGaN QDs ; Intermediate bands ; Intermediate-band solar cells ; J-V characteristics ; P-i-n structure ; Quantum Dot ; Recombination lifetime ; Recombination mechanisms ; Solar cell structures ; Solar spectrum ; Third generation ; Conversion efficiency ; Energy conversion ; Gallium ; Optical waveguides ; Semiconductor quantum dots ; Solar cells ; Solar energy
  8. Source: Physica E: Low-Dimensional Systems and Nanostructures ; Volume 42, Issue 9 , July , 2010 , Pages 2353-2357 ; 13869477 (ISSN)
  9. URL: http://www.sciencedirect.com/science/article/pii/S1386947710002523