The laser-assisted field effect transistor gas sensor based on morphological zinc-excited tin-doped in2o3 nanowires

Shariati, M ; Sharif University of Technology

466 Viewed
  1. Type of Document: Article
  2. DOI: 10.1142/S0218625X1750113X
  3. Abstract:
  4. The gas nanosensor of indium oxide nanowires in laser assisted approach, doped with tin and zinc for gas sensing and 1D growth purposes respectively, was reported. The nanowires were very sensitive to H2S gas in low concentration of 20 ppb gas at room temperature. The fast dynamic intensive and sensitive response to gas was in a few seconds with an on/off sensitivity ratio of around 10. The square cross-section indium oxide nanowires were fabricated through physical vapor deposition (PVD) mechanism and annealing approach. The field emission scanning electron microscopy (FESEM) observations indicated that the annealing temperature was vital in nanostructures' morphology. The fabricated nanowires for the optimized annealing temperature in applied growth technique were around 60nm in diameter. © 2017 World Scientific Publishing Company
  5. Keywords:
  6. Doping ; Field effect transistor ; Gas sensor ; Physical vapor deposition processes ; Semiconducting indium compound ; Annealing ; Chemical sensors ; Deposition ; Doping (additives) ; Field emission microscopes ; Gas detectors ; Gas sensing electrodes ; Gases ; Indium ; Nanowires ; Physical vapor deposition ; Scanning electron microscopy ; Semiconducting indium ; Semiconducting indium compounds ; Tin oxides ; Vapor deposition ; Zinc ; Annealing temperatures ; Field emission scanning electron microscopy ; Gas nanosensor ; Growth techniques ; Indium oxide nanowires ; Low concentrations ; Physical vapor deposition process ; Square cross section ; Field effect transistors
  7. Source: Surface Review and Letters ; Volume 24, Issue 8 , 2017 ; 0218625X (ISSN)
  8. URL: https://www.worldscientific.com/doi/abs/10.1142/S0218625X1750113X