A series stacked IGBT switch based on a concentrated clamp mode snubber for pulsed power applications

Zarghani, M ; Sharif University of Technology | 2019

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  1. Type of Document: Article
  2. DOI: 10.1109/TPEL.2019.2894994
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2019
  4. Abstract:
  5. Clamp mode snubbers are very well suited for the series structure of the insulated-gate bipolar transistors (IGBTs) in pulsed power applications. They properly meet the necessities expected from them such as the fast operating of the series IGBTs since they have no effect on the gate side. In addition, they can provide safe voltage condition for the IGBTs in short circuit faults, which are very probable in pulsed applications. The clamp mode snubber can perform its voltage balancing task whenever the power capacity of the snubber can support the injected powers due to the voltage unbalancing factors. This paper initially introduces the main factors injecting power to the snubbers. Then, it will be illustrated that the exact injected power to each predetermined snubber cannot be determined due to the uncertainties about the effect of the voltage unbalancing factors. Although it is impossible to determine the exact value of the power injected to each snubber, the total injected powers to the snubbers can be calculated. Therefore, as an effective remedy, this paper proposes a concentrated snubber. Using the proposal, all the injected powers are conducted to a centralized circuit and can be easily managed. In addition, analytical expressions are provided for proper dimensioning of the proposed concentrated snubber elements. Furthermore, the performance of the proposed concentrated snubber is evaluated using simulations and experimental prototyping. © 1986-2012 IEEE
  6. Keywords:
  7. Insulated gate bipolar transistor (IGBT) ; Pulsed power supplies ; Snubbers ; Concentration (process) ; Analytical expressions ; Pulsed power applications ; Pulsed power supply ; Series stacking ; Short-circuit fault ; Snubbers ; Voltage balancing ; Voltage conditions ; Insulated gate bipolar transistors (IGBT)
  8. Source: IEEE Transactions on Power Electronics ; Volume 34, Issue 10 , 2019 , Pages 9573-9584 ; 08858993 (ISSN)
  9. URL: https://ieeexplore.ieee.org/document/8624388