A high-voltage series-stacked IGBT switch with active energy recovery feature for pulsed power applications

Mohsenzade, S ; Sharif University of Technology | 2020

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  1. Type of Document: Article
  2. DOI: 10.1109/TIE.2019.2921297
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2020
  4. Abstract:
  5. Applying series configuration of the insulated gate bipolar transistors (IGBTs) to the pulsed power supplies offers unique features such as compactness and long life time. In the high-voltage pulsed power supplies, a large number of the IGBTs are required to be serially connected. Hence, the safe operating condition provision for the series IGBTs is an important and crucial issue. The effect of the voltage unbalancing factors becomes remarkable when the number of switches in the series structure increases. There are passive and active methods to balance the voltage of the series IGBTs. In both of these methods, an amount of power must be dissipated to remove the effect of the voltage unbalancing factors. Consequently, the power loss is considerable when a large number of series devices are necessary. This paper proposes an effective power recovery system that recovers the power associated with the series stacking of the IGBTs. Using this proposal, the efficiency of the resulted series switch enhances considerably. The power recovery system can be implemented easily for any number of series IGBTs. It consists of a simple dc-dc converter and several interconnection diodes for power recovery procedure. Proper performance of the proposed structure is evaluated by the aid of simulations and experiments. © 1982-2012 IEEE
  6. Keywords:
  7. Pulsed power supplies ; DC-DC converters ; HVDC power transmission ; Recovery ; Semiconductor devices ; Structure (composition) ; Number of switches ; Pulsed power applications ; Pulsed power supply ; Safe operating conditions ; Series configuration ; Snubber circuit ; Solid state switch ; Unique features ; Insulated gate bipolar transistors (IGBT)
  8. Source: IEEE Transactions on Industrial Electronics ; Volume 67, Issue 5 , 2020 , Pages 3650-3661
  9. URL: https://ieeexplore.ieee.org/document/8734873