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Two-dimensional quantum simulation of scaling effects in ultrathin body MOSFET structure: NEGF approach

Orouji, A.A ; Sharif University of Technology | 2007

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  1. Type of Document: Article
  2. DOI: 10.1109/IWPSD.2007.4472491
  3. Publisher: 2007
  4. Abstract:
  5. For the first time, we present self-consistent solution of ultrathin body device structures to investigate the device parameters variation on the characteristics of nanoscale MOSFET. Our two dimensional (2-D) device simulator Is based on Nonequlibrium Green's Function (NEGF) forma lism. Starting from a basic structure (DG-MOSFET) with a gate length of 10 nm, variation of gate length, channel thickness, gate oxide parameters was carried out in connection with the numerical calculation of device characteristics. In this work Quantum transport equations are solved in 2-D by NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of simulation to get potential profile. Once self-consistently achieved all parameters of interest (e.g. potential profile, charge density, DIBL, etc) can be measured. ©2007 IEEE
  6. Keywords:
  7. Charge density ; Differential equations ; Electric conductivity ; Green's function ; Numerical analysis ; Parameter estimation ; Poisson's equation ; Quantum chemistry ; Quantum electronics ; Semiconductor device manufacture ; Semiconductor device models ; Semiconductor device structures ; Semiconductor devices ; Semiconductor materials ; Semiconductor switches ; Two-dimensional ; Active areas ; Basic structures ; Channel thickness ; Device parameters ; Device simulators ; DG-MOSFET ; Gate lengths ; Gate oxides ; Nanoscale MOSFET ; NEGF ; Numerical calculations ; Potential profile ; Quantum mechanical ; Quantum simulations ; Quantum transport equations ; Scaling effects ; Self-consistent solution ; Two-dimensional simulation ; Ultrathin body ; Ultrathin body device structures ; Ultrathin body MOSFET ; MOSFET devices
  8. Source: 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, 16 December 2007 through 20 December 2007 ; 2007 , Pages 240-242 ; 9781424417285 (ISBN)
  9. URL: https://ieeexplore.ieee.org/document/4472491