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The growth of CoSi2 thin film in Co/W/Si(100) multilayer structures
Moshfegh, A. Z ; Sharif University of Technology | 2003
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- Type of Document: Article
- DOI: 10.1016/j.ssc.2003.08.013
- Publisher: 2003
- Abstract:
- The growth of a CoSi2 thin film has been studied for the Co/W/Si(100) system. The Co film with a thickness of about 30 nm was grown over 12 nm sputtered W interlayer using the evaporation technique. The deposited multilayer structure was annealed in an N2 (80%)+H2 (20%) environment in a temperature range from 400 to 1000 °C for 60 min. The samples were characterized by X-ray diffraction (XRD), four point probe sheet resistance (RS) measurement and scanning electron microscopy (SEM). Using the deposited Co/Si(100) system as a reference point, a CoSi2 layer was formed at 800 °C with undesirable crystalline structure and the RS value of about 1.6Ω/□. Instead, for the Co/W/Si(100) system, it has been observed that CoSi2 layer grown at about 900 °C has a nearly single crystalline structure with a dominant (200) texture and the RS value of about 1.0Ω/□. The presence of a W interlayer between Co and Si causes the CoSi2 layer to be thermally stable at high temperatures (900-1000 °C). © 2003 Elsevier Ltd. All rights reserved
- Keywords:
- A. Silicidation ; C. CoSi2 ; C. W interlayer ; D. Thermal stability
- Source: Solid State Communications ; Volume 128, Issue 6-7 , 2003 , Pages 239-244 ; 00381098 (ISSN)
- URL: https://www.sciencedirect.com/science/article/abs/pii/S0038109803007348