Sharif Digital Repository

We present an edge emitting laser structure employing silicon carbide polymers only. In this structure, 3C-SiC well embedded in 6H-SiC barriers are used as the active region, which is sandwiched between the 6H-SiC mirror at the top and bottom of structure. The basic design goal is to use only silicon carbide polymers and decrease the threshold current and stable optical wavelength of the lasers with silicon carbide polymers. This paper provides key results of the device characteristics, including the light power versus electrical current and the optical wavelength versus current  

In the present paper, we investigated the various elements of heat sources within a silicon carbide polymers (6H-SiC and 3C-SiC) semiconductor laser. The device employs 3C-SiC quantum well (QW) which is sandwiched between two layers of 6H-SiC as cladding regions that can be interpreted in terms of a type-II heterostructure character and a built-in electric field due to the pyroelectricity of 6H using a numerical simulator. The basic design goal was the study of the various elements of heat sources, including the Joule heat power, the Peltier-Thomson heat power and the recombination heat power  

In this paper, simulative study on the effects of lattice temperature on a GaInP/6H-SiC strained quantum-well (QW) laser's device is presented. Loss mechanisms are severe in the edge-emitting lasers. As a consequence, the wall-plug efficiency is sensitive to changes in temperature. The lasers used in this work were separate-confinement quantum-well lasers with a single strained GaInP, located in a latticematched waveguide core and cladding region of 6H-SiC. This paper provides the key results of the wall-plug efficiency upon the lattice temperature  

In the present work, a new structure of the strained quantum-well (QW) laser diode is designed and simulated. In this structure, the active region consists of tow 6H-SiC barrier and 3C-SiC quantum well (QW)which is sandwiched between two layers of 6H-SiC that can be interpreted in terms of a type-II heterostructure character and a built-in electric field due to the pyroel ectricity of 6H using an industrial-based numerical simulator. The basic design goal was to decrease the threshold current by using only silicon carbide polymers. We could obtain a working model at stable optical wavelength of 0.83μm. This paper provides key results of the device characteristics, including the light power...